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Epitaxy of Germanium on SI(001) Grating Templates

Published online by Cambridge University Press:  15 February 2011

C.C. Umbach  and
J.M. Blakely
C.C. Umbach
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY14853
J.M. Blakely
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY14853
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Abstract

Epitaxial Ge films (< 3 ML) have been grown at elevated temperatures on Si (001) grating substrates (repeat spacing of 2.0 μm) and imaged using room temperature scanning tunneling Microscopy (STM). The Ge films exhibit the 2×n reconstruction associated with missing dimer rows. The value of n and the growth morphology are influenced by the deposition rate and by annealing. At substrate temperatures of 600° C and deposition rates >0.5 ML/Min., islands elongated along the the dimer row direction nucleate at steps and on terraces. With sufficient annealing at 800° C, the islands coarsen and are eventually eliminated. The roughness of the A-type step becomes greater than that of the B-type step, which is the reverse of the situation with pure Si (001). The separation between missing dimer rows and hence the value of n are increased by annealing. Differences in substrate terrace widths due to the periodically varying step density of thegratings affect the growth Modes: two-dimensional islands occur near the extrema of the gratings whereas step flow occurs when steps are separated by ∼150 Å or less.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 3
Copyright
Copyright © Materials Research Society 1994

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