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EPITAXY OF CdTe ON (100) GaAs

Published online by Cambridge University Press:  28 February 2011

L. A. KOLODZIEJSKI ,
R. L. GUNSHOR ,
N. OTSUKA  and
C. CHOI
L. A. KOLODZIEJSKI
Affiliation:
School of Electrical Engineering
R. L. GUNSHOR
Affiliation:
School of Electrical Engineering
N. OTSUKA
Affiliation:
Materials Engineering, Purdue University, West Lafayette, Indiana 47907
C. CHOI
Affiliation:
Materials Engineering, Purdue University, West Lafayette, Indiana 47907
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Abstract

Two epitaxial orientations [(111) and (100)] of CdTe are grown on (100) GaAs in the presence of a 14.6% lattice mismatch. Consistent nucleation of a selected orientation is achieved by employing specific growth techniques. The growth techniques for selection of both orientations are described. High resolution electron microscopy has been used to investigate the interface between the CdTe epilayer and the GaAs substrate. For the (111) orientation strong interaction exists between the epitaxial deposit and the substrate, whereas a weakened interaction between deposit and substrate induces the (100) orientation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 91
Copyright
Copyright © Materials Research Society 1986

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