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Epitaxy in the Presence of Very Large Misfit: High Resolution TEM Study of Al/Si, Ag/Si, Al/CaF2/Si and Ag/CaF2/Si

Published online by Cambridge University Press:  25 February 2011

F. K LeGoues ,
M. Liehr  and
M. Renier
F. K LeGoues
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598, USA
M. Liehr
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598, USA
M. Renier
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598, USA
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Abstract

We summarize high resolution transmission electron microscopy studies of interfaces with 33% misfit. We explain the existence of epitaxial interfaces for this systems by a geometrical argument similar to the 0-lattice models used to study high angle grain boundaries. Differences between systems very similar in structures are explained. We use the thus found epitaxial interfaces to build multilayered structures of the type metal/insulator/semiconductor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 94: Symposium D – Initial Stages of Epitaxial Growth , 1987 , 121
Copyright
Copyright © Materials Research Society 1987

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References

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