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Epitaxy and Defects in Laser-Irradiated, Single-Crystal Bismuth

Published online by Cambridge University Press:  25 February 2011

Aubrey L. Helms Jr. ,
Clifton W. Draper ,
Dale C. Jacobson ,
John M. Poate  and
Steven L. Bernasek
Aubrey L. Helms Jr.
Affiliation:
Department of Chemistry, Frick Chemistry Laboratory, Princeton University, Princeton, NJ 08554;
Clifton W. Draper
Affiliation:
AT&T Technologies Engineering Research Center, P.O. Box 900, Princeton, NJ 08540;
Dale C. Jacobson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974.
John M. Poate
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974.
Steven L. Bernasek
Affiliation:
Department of Chemistry, Frick Chemistry Laboratory, Princeton University, Princeton, NJ 08554;
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Abstract

The (0001), (1010), and (2110) faces of Bi have been pulse laser melted at 0.5 J/cm2 with a Q-switched Ruby laser. Nomarski Interference Contrast Microscopy, Channeling, and selective chemical etching have been used to investigate the response to the laser irradiation. The response of the material and the level of damage is shown to be strongly correlated to the critical resolved shear stress characteristics in the particular crystallographic direction studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 439
Copyright
Copyright © Materials Research Society 1985

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References

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