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Epitaxially Grown N+ Phosphorus Collector Peaks In Highfrequency hbt's with Implanted Emitters

Published online by Cambridge University Press:  10 February 2011

C. C. G Visser ,
L. K. Nanver  and
A. Van Den Bogaard
C. C. G Visser
Affiliation:
Laboratory of ECTM, DIMES, Delft University of Technology, Feldmannweg 17, 2628 CB Delft, The Netherlands, [email protected]
L. K. Nanver
Affiliation:
Laboratory of ECTM, DIMES, Delft University of Technology, Feldmannweg 17, 2628 CB Delft, The Netherlands, [email protected]
A. Van Den Bogaard
Affiliation:
Laboratory of ECTM, DIMES, Delft University of Technology, Feldmannweg 17, 2628 CB Delft, The Netherlands, [email protected]
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Abstract

The boron out-diffusion into the Si collector of SiGe HBT's with implanted emitters is compensated by an epitaxially grown n+ phosphorus peak effectively positioned adjacent to the as-grown boron peak. Detrimental barrier formation is suppressed in devices with base sheet resistance 3.3 k.Ω and cut-off frequency of 31 GHz.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 105
Copyright
Copyright © Materials Research Society 1998

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References

1. Nanver, L.K., Goudena, E.J.G., Visser, C.C.G., van Zeijl, H.W., and Slotboom, J.W., Proceedings 26thESSDERC, Bologna, Italy, 9–11 Sept., pp. 469–472 (1996).Google Scholar
2. Nanver, L.K., Visser, C.C.G., van den Bogaard, A., to appear in J. Vac. Sci. and Techn. B, June 1998.Google Scholar
3. Kamins, T.I., and Lefforge, D., J. Electrochem. Soc., 144, 2, 674 (1997).Google Scholar
4. Kuo, P., Hoyt, J.L., Gibbons, J.F., Turner, J.E., Jacowitz, R.D., and Kamins, T.I., Appi. Phys. Lett 62, 612 ( 1995).Google Scholar
5. Lever, R.F., Bonar, J.M. and Willoughby, A.F.W., J. Appl. Phys. 83, 4, 1988 (1988).Google Scholar