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Epitaxial Thin Film Growth and Device Development in Monocrystalline Alpha and Beta Silicon Carbide

Published online by Cambridge University Press:  26 February 2011

Robert F. Davis ,
J. W. Palmour  and
J. A. Edmond
Robert F. Davis
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695
J. W. Palmour
Affiliation:
Cree Research, Inc., Durham, NC 27713
J. A. Edmond
Affiliation:
Cree Research, Inc., Durham, NC 27713
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Abstract

High purity monocrystalline β-SiC films have been chemically vapor deposited on Si (100) and α-SiC (0001) by numerous groups around the world using SiH4 and C3H8 or C2H4 carried in H2. Films grown on nominal Si (100) contain substantial concentrations of dislocations, stacking faults and inversion domain boundaries; those deposited on α-SiC (0001) contain primarily double positioning boundaries. Both types of boundaries may be eliminated by using off-axis orientations of the respective substrates. However, the films grown on off-axis a substrates were the a(6H) polytype. Schottky diode, p-n junction, MESFET, MOSFET and HBT devices have been fabricated with encouraging results for future commercial applications. The barrier heights and ideality factors of Au Schottky diodes on β-SiC ranged from 0.9—1.15 eV and 1.2—1.6, respectively. However, the reverse leakage currents were much lower and the breakdown voltages considerably higher at all temperatures for the diodes on the α-SiC films. MESFETs fabricated using the diodes in the alpha films were superior to those in beta with the transconductance being more than 15 times greater in the former. Enhancement-and depletion-mode MOSFETs exhibited better behavior in terms of saturation, drain voltage and high temperature operation. All films produced on a-SiC substrates were superior to those produced in beta films grown on Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 463
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Johnson, E.O., RCA Rev. 26, 163 (1965).Google Scholar
2. Keyes, R.W., Proc. IEEE 60, 225 (1972).Google Scholar
3. Nishino, S., Hazuki, Y., Matsunami, H., and Tanaka, T., J. Electrochem. Soc. 137, 2674 (1980).Google Scholar
4. Nishino, S., Powell, J.A. and Will, H.A., Appl. Phys. Lett. 42, 460 (1983).Google Scholar
5. Suzuki, A., Furukawa, K., Higashigaki, Y., Harada, S., Nakajima, S., and Inoguchi, T., J. Cryst. Growth 70, 287 (1984).Google Scholar
6. Addamiano, A. and Klein, P. H., J. Cryst. Growth 70, 291 (1984).Google Scholar
7. Sasaki, K., Skuma, E., Misana, S., Yoshida, S., and Gonda, S., Appl. Phys. Lett. 45, 73 (1984).Google Scholar
8. Liaw, P. H. and Davis, R. F., J. Electrochem. Soc. 132, 642 (1985).Google Scholar
9. Fujiwara, Y., Sakuma, E., Misawa, S., Endo, K., and Yoshida, S., Appl. Phys. Lett. 49, 388 (1986).Google Scholar
10. Yamanaka, M., Daimon, H., Sakuma, E., Misawa, S., and Yoshida, S., J. Appl. Phys. 61, 599 (1987).Google Scholar
11. Suzuki, A., Uemoto, A., Shigeta, M., Furukawa, K., and Nakajima, S., Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 101–104.Google Scholar
12. Shibahara, K., Nishino, S., and Matsunami, H., J. Cryst. Growth 78, 538 (1986).Google Scholar
13. Powell, J. A., Matus, L.G., and Kucmarski, M.A., J. Electrochem. Soc. 134, 1558 (1987).Google Scholar
14. Yoshida, S., Sakuma, E., Okumura, H., Misawa, S., and Endo, K., J. Appl. Phys. 62, 303 (1987).Google Scholar
15. Fugii, Y., Ogura, A., Furukawa, K., Shigeta, M., Suzuki, A., and Nakajima, S. in Heteroepitaxy on Silicon: Fundamentals, Structures, and Devices, edited by Choi, H.K., Hull, R., Ishiwara, H., and Nemanich, R.J. (Mater. Res. Soc. Proc. 116, Pittsburgh, PA 1988) pp. 350–356.Google Scholar
16. Sugii, T., Ito, T., Furumura, Y., Doki, M., Mieno, F., Eshita, T., Jour. Electrochem. Soc. 134, 2545 (1987).Google Scholar
17. Shinohara, M., Yamanaka, M., Daimon, H., Sakuma, E., Okumura, H., Misawa, S., Endo, K., and Yoshida, S., Jap. Jour. Appl. Phys. 27, L434 (1988).Google Scholar
18. Kim, H.J. and Davis, R.F., Jour. Appl. Phys. 60, 2897 (1986).Google Scholar
19. See papers by Matsnami et al., Matus and Powell, Nishino and Saraie, and Kong, H.S. et al. in Amorphous and Crystalline Silicon Carbide, edited by Harris, G.L. and Yang, C.Y-W. (Springer-Verlag, New York, 1988).Google Scholar
20. Kim, H.J., Davis, R.F., Cox, X.B. and Linton, R., J. Electrochem. Soc. 134, 2269 (1987).Google Scholar
21. Nutt, S.R., Smith, D.J., Kim, H.J., and Davis, R.F., Appl. Phys. Lett. 50, 203 (1987).Google Scholar
22. Glass, J.T., Wang, Y.C., Kong, H.S., and Davis, R.F., in Heteroepitaxy on Silicon: Fundamentals, Structures, and Devices, edited by Choi, H.K., Hall, R., Ishiwara, H., and Nemanich, R. J. (Mater. Res. Soc. Proc. 116, Pittsburgh, PA 1988) pp. 337–349.Google Scholar
23. Pirouz, P., Chorey, C.M., and Powell, J.A., Appl. Phys. Lett. 50, 221 (1987).Google Scholar
24. Kong, H.S., Wang, Y.C., Glass, J.T., and Davis, R.F., Jour. Mater. Res. 3, 521 (1988).Google Scholar
25. Kong, H.S., Glass, J.T., and Davis, R.F., Jour. Applied Phys. 64, 2672 (1988).Google Scholar
26. Kong, H.S., Glass, J.T., and Davis, R.F., Jour. Mater. Res. 4, 204 (1989).Google Scholar
27. Tairov, Y.M., Tsvetkov, V.F.: Journ. of Crystal Growth 43, 209 (1978).Google Scholar
28. Tairov, Y.M., Tsvetkov, V.F.: J. Crystal Growth 52, 146 (1981).Google Scholar
29. Ziegler, G., Lanig, P., Theis, D., Weyrich, C.: IEEE Transactions on Electron Devices ED-30, 277 (1983).Google Scholar
30. Kim, H.J. and Davis, R.F., Jour. Electrochem. Soc. 133, 2350 (1986).Google Scholar
31. Ryu, J., Kim, H.J., and Davis, R.F. in Rapid Thermal Processing, edited by Sedgwick, T.O., Seidel, T.E. and Tsau, B. Y. (Mater. Res. Soc. Proc. 52, Pittsubrgh, PA 1986) pp. 165–172.Google Scholar
32. Edmond, J.A., Withrow, S.P., Kong, H.S., and Davis, R.F., in Beam-Solid Interactions and Phase Transformations, edited by Kurz, H., Olson, G.L., and Poate, J.M. (Mater. Res. Soc. Proc. 51, Pittsburgh, PA 1986) pp. 395–402.Google Scholar
33. Edmond, J.A., Withrow, S.P., Wadlin, W., and Davis, R.F. in Interfaces. Superlattices. and Thin Films, edited by Dow, J.D., Schuller, I.K., and Hilliard, J. (Mater. Res. Soc. Proc. 77, Pittsburgh, PA 1987) pp. 405–410.Google Scholar
34. Palmour, J.W., Kim, H.J., and Davis, R.F. in Thin Films-Interfaces and Phenomena, edited by Nemanich, R.J., Ho, D.S., and Lau, S.S. (Mater. Res. Soc. Proc. 54, Pittsburgh, PA 1986) pp. 553–560.Google Scholar
35. Edmond, J.A., Ryu, J., Glass, J.T., and Davis, R.F., Jour. Electrochem. Soc. 135, 359 (1988).Google Scholar
36. Das, K., Kong, H.S., Petit, J.B., Bumgarner, J.W., Davis, R.F., and Matus, L.G., Accepted for Publication by the Electrochemical Society.Google Scholar
37. Campbell, R.B. and Chang, H.C. in Semiconductors and Semimetals, Vol. 7B edited by Willardson, R.K. and Beer, A.C. (Academic Press, Inc., San Diego, CA, 1978) pp. 625–683.Google Scholar
38. Yoshida, S., Sasaki, K., Sakuma, E., Misawa, S. and Gonda, S., Appl. Phys. Lett. 46, 766 (1985).Google Scholar
39. Furukawa, K., Uemoto, A., Fujii, Y., Shigeta, M., Suzuki, A., and Nakajima, S., Extended Abstracts of the 19th Conference on Solid State Devices and Materials, #C–4, Tokyo, Japan (1987) pp. 231–234.Google Scholar
40. Yoshida, S., Daimon, H., Yamanaka, M., Sakuma, E., Misawa, S., and Endo, K., J. Appl. Phys., 60, 2985 (1986).Google Scholar
41. Daimon, H., Yamanaka, M., Sakuma, E., Misawa, S., Endo, K., and Yoshida, S., Jpn. Jour. Appl. Phys. 25, L592 (1986).Google Scholar
42. Daimon, H., Yamanaka, M., Shinohara, M., Sakuma, E., Misawa, S., Endo, K., and Yoshida, S., Appl. Phys. Lett. 51, 2106 (1987).Google Scholar
43. Kong, H.S., Palmour, J.W., Glass, J.T., and Davis, R.F., Appl. Phys. Lett. 51, 442 (1987).Google Scholar
44. Kurukawa, K., Uemoto, A., Shigota, M., Suzuki, A., and Makajima, S., Appl. Phys. Lett. 48, 1536 (1986).Google Scholar
45. Suzuki, A., Uemoto, A., Shigota, M., Furukawa, K., and Makajima, S., in Extended Abstracts of the 18th Int. Conf. on Solid State Devices and Materials, Tokyo, p.101 (1986).Google Scholar
46. Shibahara, K., Saito, T., Nishino, S., and Matsunami, H., in Extended Abstracts of the 18th Int. Conf. on Solid State Devices and Materials, Tokyo, 1986, p. 717.Google Scholar
47. Fuma, H., Misura, A., Tadano, H., Sugiyama, S., and Takigawa, M., #A–1 in Extended Abstracts of the 20th Conference on Solid State Devices and Materials, Tokyo, Japan (1988) pp. 13–16.Google Scholar
48. Palmour, J.W., Kong, H.S., and Davis, R.F., J. Appl. Phys. 64, 2168 (1988).Google Scholar
49. Kondo, Y., Takahasi, T., Ishi, K., Hayashi, Y., Sakuma, E., Misawa, S., Daimon, H., Yamaraka, M., and Yoshida, S., IEEE Electron Device Lett. 7, 404 (1986).Google Scholar
50. Furukawa, K., Hatano, A., Uemoto, A., Fugii, Y. and Nakanishi, K., Shigeta, M., Suzuki, A., and Nakajima, S., IEEE Electron Device Letters, Vol. EDL–8, No. 2, 1987.Google Scholar
51. Palmour, J.W., Kong, H.S., and Davis, R.F., Appl. Phys. Lett. 51, 2028 (1987).Google Scholar
52. Sugii, T., Ito, T., Furumura, Y., Doki, M., Mieno, F., and Maeda, M., IEEE Electron Device Letters 9, 87 (1988).Google Scholar
53. Dmitriev, V. A., Levinshtein, M.E., Vainshtein, S.N., and Chelmokov, V.E., Electron. Lett. 24, 1032 (1988).Google Scholar