Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-27T02:42:15.140Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial Silicon-Carbon Alloy Growth by Laser Induced Melting and Solidification

Published online by Cambridge University Press:  21 February 2011

Kenneth M. Kramer  and
Michael O. Thompson
Kenneth M. Kramer
Affiliation:
Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Michael O. Thompson
Affiliation:
Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Get access

Abstract

Ion implantation of carbon into single-crystal silicon followed by excimer laser irradiation was used to create supersaturated, epitaxial SixC1-x. films. Crystallization proceeded from the underlying single-crystal silicon through the carbon containing layers at velocities of approximately 5 m/s. Characterization by high-resolution x-ray diffraction and Fourier-transform infrared absorption indicate that the carbon is found predominantly on substi-tutional lattice sites for concentrations up to 1.4 at.% C. Secondary-ion mass spectrometry profiles and numerical mass transfer calculations were used to estimate the diffusion coefficient of carbon in the liquid as 2-3 × 10−4cm2/s with a segregation coefficient greater than 0.4. Unusual diffusion behavior was observed for the carbon at 1.4 at.% C. At higher concentrations, evidence of SiC precipitates was observed in transmission electron microscope images and FTIR absorption spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 398: Symposium C – Thermodynamics and Kinetics of Phase Transformations , 1995 , 127
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Zeiglar, J.F., TRIM software, (1992).Google Scholar
2 Phillips, , HRS software, (1990).Google Scholar
3 Windisch, D. and Becker, P., Philos. Mag. A 58, 435 (1988).Google Scholar
4 Strane, J., Ph.D. thesis, Cornell University, (1994).Google Scholar
5 Akimchenko, I.P., Kisseleva, K.F., Krasnopvtsev, V.V., Touryanski, A.G., and Vavilov, V.S., Radiat. Eff. 48, 7 (1980).Google Scholar
6 Bean, A.R. and Newman, R.C., J. Phys. Chem. Solids 32, 1211 (1971).Google Scholar
7 Newman, R.C., Mater. Res. Soc. Proc. 59, 403 (1985).Google Scholar
8 Spitzer, W.G., Kleinman, D.A., and Frosch, C.J., Phys. Rev. 113, 133 (1959).Google Scholar