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Epitaxial Silicon Layers Made by Reduced Pressure/Temperature CVD

Published online by Cambridge University Press:  25 February 2011

J.L. Regolini ,
D. Bensahel ,
J. Mercier ,
C. D'Anterroches  and
A. Perio
J.L. Regolini
Affiliation:
Centre National d'Etudes des Telecommunications BP 98 -38243 - Meylan Cedex -, France
D. Bensahel
Affiliation:
Centre National d'Etudes des Telecommunications BP 98 -38243 - Meylan Cedex -, France
J. Mercier
Affiliation:
LEPES/CNRS, Av. des Martyrs, 38042 Grenoble Cedex -, France
C. D'Anterroches
Affiliation:
Centre National d'Etudes des Telecommunications BP 98 -38243 - Meylan Cedex -, France
A. Perio
Affiliation:
Centre National d'Etudes des Telecommunications BP 98 -38243 - Meylan Cedex -, France
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Abstract

In a rapid thermal processing system working at a total pressure of a few Torr, we have obtained selective epitaxial growth of silicon at temperatures as low as 650°C. When using SiH2Cl2 (DCS) as the reactive gas, no addition of HCl is needed. Nevertheless, using SiH4 below 950°C a small amount of HCl should be added.

Some kinetic aspects of the two systems, DCS/HCI/H2 and SiH4/HCl/H2, are presented and discussed. For the DCS system, we show that the rate-limiting reactions are slightly different from those commonly accepted in the literature, where the results are from systems working at atmospheric pressure or in the 20-100 Torr range.

Our model is based on the main decomposition of DCS, SiH2Cl→SiHCl + HCl, instead of the widely accepted reaction SiH2Cl2→SiCl2 + H2. This is the main reason why no extra HCl is required in the DCS/H2 system to obtain full selectivity from above 1000°C down to 650°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 129: Symposium B – Laser and Particle-Beam Modification of Chemical Processes on Surfaces , 1988 , 609
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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