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Epitaxial silicon carbide simulations vs. experiments: etching, growth rates and aluminum/nitrogen doping

Published online by Cambridge University Press:  11 February 2011

Jérôme Mézière ,
Elisabeth Blanquet ,
Michel Pons ,
Jean-Marc Dedulle ,
Pierre Ferret ,
Léa Di Cioccio  and
Thierry Billon
Jérôme Mézière
Affiliation:
LTPCM UMR 5614 of CNRS, INPG/UJF, Domaine Universitaire, BP 75, 38402 Saint Martin d′Hères cedex, France.
Elisabeth Blanquet
Affiliation:
LTPCM UMR 5614 of CNRS, INPG/UJF, Domaine Universitaire, BP 75, 38402 Saint Martin d′Hères cedex, France.
Michel Pons
Affiliation:
LTPCM UMR 5614 of CNRS, INPG/UJF, Domaine Universitaire, BP 75, 38402 Saint Martin d′Hères cedex, France.
Jean-Marc Dedulle
Affiliation:
LTPCM UMR 5614 of CNRS, INPG/UJF, Domaine Universitaire, BP 75, 38402 Saint Martin d′Hères cedex, France.
Pierre Ferret
Affiliation:
CEA/DRT/LETI CEA-Grenoble, 38054 Grenoble Cedex 9, France
Léa Di Cioccio
Affiliation:
CEA/DRT/LETI CEA-Grenoble, 38054 Grenoble Cedex 9, France
Thierry Billon
Affiliation:
CEA/DRT/LETI CEA-Grenoble, 38054 Grenoble Cedex 9, France
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Abstract

This paper summarizes recent experimental and simulation results on etching, growth rates and aluminum/nitrogen incorporation in SiC epitaxial layers grown in a horizontal LPCVD hotwall reactor commercialized by the Epigress company. The combined use of modeling and experiments allows to identify and to quantify the main growth phenomena. In this paper, a chemistry model including surface deposition and hydrogen etching is first described. It is found that the contribution of the etching of the susceptor to the SiC growth is not negligible. A simple model is used to describe nitrogen incorporation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K1.4
Copyright
Copyright © Materials Research Society 2003

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References

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