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Epitaxial Semiconducting and Metallic Iron Silicides

Published online by Cambridge University Press:  03 September 2012

H. Von KÄNel ,
U. Kafader ,
P. Sutter ,
N. Onda ,
H. Sirringhaus ,
E. MÜller ,
U. Kroll ,
C. Schwarz  and
S. Goncalves—conto
H. Von KÄNel
Affiliation:
Laboratorium für Festkörperphysik, ETH Zürich, CH—8093 Ztrich, Switzerland
U. Kafader
Affiliation:
Laboratorium für Festkörperphysik, ETH Zürich, CH—8093 Ztrich, Switzerland
P. Sutter
Affiliation:
Laboratorium für Festkörperphysik, ETH Zürich, CH—8093 Ztrich, Switzerland
N. Onda
Affiliation:
Laboratorium für Festkörperphysik, ETH Zürich, CH—8093 Ztrich, Switzerland
H. Sirringhaus
Affiliation:
Laboratorium für Festkörperphysik, ETH Zürich, CH—8093 Ztrich, Switzerland
E. MÜller
Affiliation:
Laboratorium für Festkörperphysik, ETH Zürich, CH—8093 Ztrich, Switzerland
U. Kroll
Affiliation:
Institute of Microtechnology, University of Neuchâtel, Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Switzerland
C. Schwarz
Affiliation:
Laboratorium für Festkörperphysik, ETH Zürich, CH—8093 Ztrich, Switzerland
S. Goncalves—conto
Affiliation:
Laboratorium für Festkörperphysik, ETH Zürich, CH—8093 Ztrich, Switzerland
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Abstract

We discuss the properties of semiconducting iron silicides, grown epitaxially on Si(001) and Si(111) by molecular beam epitaxy. The growth on Si (111) involves phase transitions from epitaxially stabilized metallic phases, leading to larger epitaxial β-FeSi2 grains than most other deposition procedures. The structural and electric properties of β-FeSi2/Si(001) are improved considerably for growth temperatures above 650 °C. Hall mobilities of p—conducting films reach values up to 600 cm2/Vsec at 100 K, at carrier densities below 1017 cm−3. Despite of the high majority carrier mobility and low carrier density, the photoelectric response of p-β-FeSi2/n-Si(001) diodes does not yield any significant contribution from the silicide, however, in accordance with the expected band structure diagram.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 73
Copyright
Copyright © Materials Research Society 1994

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References

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