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Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates

Published online by Cambridge University Press:  15 February 2011

Zhonghai Yu ,
M.A.L. Johnson ,
J.D. Brown ,
N.A. El-Masry ,
J. F. Muth ,
J.W. Cook Jr ,
J.F. Schetzina ,
K.W. Haberern ,
H.S. Kong  and
J.A. Edmond
Zhonghai Yu
Affiliation:
Department of Physics, North Carolina State University, Raleigh NC 27695, [email protected]
M.A.L. Johnson
Affiliation:
Department of Physics, North Carolina State University, Raleigh NC 27695, [email protected]
J.D. Brown
Affiliation:
Department of Physics, North Carolina State University, Raleigh NC 27695, [email protected]
N.A. El-Masry
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh NC 27695
J. F. Muth
Affiliation:
Department of Physics, North Carolina State University, Raleigh NC 27695, [email protected]
J.W. Cook Jr
Affiliation:
Department of Physics, North Carolina State University, Raleigh NC 27695, [email protected]
J.F. Schetzina
Affiliation:
Department of Physics, North Carolina State University, Raleigh NC 27695, [email protected]
K.W. Haberern
Affiliation:
Cree Research Inc, 4600 Silicon Drive, Durham NC 27703
H.S. Kong
Affiliation:
Cree Research Inc, 4600 Silicon Drive, Durham NC 27703
J.A. Edmond
Affiliation:
Cree Research Inc, 4600 Silicon Drive, Durham NC 27703
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Abstract

The epitaxial lateral overgrowth (ELO) process for GaN has been studied using SiC and sapphire substrates. Both MBE and MOVPE growth processes were employed in the study. The use of SiO2 versus SiNx insulator stripes was investigated using window/stripe widths ranging from 2 μm/4 μm to 3 μm/15 μm. GaN film depositions were completed at temperatures ranging from 800°C to 1120°C. Characterization experiments included RHEED, TEM, SEM and cathodolumenescence studies. The MBE growth experiments produced polycrystalline GaN over the insulator stripes even at deposition temperatures as high as 990°C. In contrast, MOVPE growth produced single-crystal GaN stripes with no observable threading dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G4.3
Copyright
Copyright © Materials Research Society 1999

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References

1. Ponce, F. A., MRS Bulletin 22 (1997) 51.Google Scholar
2. Nakamura, S., Mukai, T., Senoh, M., Appl. Phys. Lett. 64 (1994) 1687.Google Scholar
3. Nakamura, S., Senoh, M., Iwasa, N., Nagahama, S., App. Phys. Lett. 67 (1995) 1868.Google Scholar
4. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y., Kiyoku, H., Appl. Phys. Lett. 70 (1995) 1417.Google Scholar
5. Nakamura, S. and Fasol, G., The Blue Laser Diode (Springer-Verlag: Heidelberg) (1997).Google Scholar
6. Edmond, J., Kong, H.S., Leonard, M., Bulman, G., Negley, G., Inst. of Phys. Conf. Series 142, (1996).Google Scholar
7. Akasaki, I., Sota, S., Sakai, H., Tanaka, T., Koike, M., Amano, H., Electronics Lett. 32(12), (1996) 1105.Google Scholar
8. Bulman, G.E., Doverspike, K., Sheppard, S.T., Weeks, T.W., Kong, H.S., Dieringer, H.M., Edmond, J.A., Brown, J.D., Swindell, J.T., Schetzina, J.F., Electron. Lett. 33 (1997) 1556.Google Scholar
9. Mack, M.P., Abare, A., Aizcorbe, M., Kosokoy, P., Keller, S., Mishra, U.K., Coldren, L., DenBaars, S., MRS Internet J. Nitride Semicond. Res. 2 (1997) 41.Google Scholar
10. Detchprohm, T., Kuroda, T., Hiramatsu, K., Sawaki, N., Goto, H., Inst. of Phys. Conf. Series 142 (1996) 859.Google Scholar
11. Usui, A., Sunakawa, H, Sakai, A., Yamaguchi, A.A., Jpn. J. Appl. Phys. 36 (1997) L899.Google Scholar
12. Kapolnek, D., Keller, S., Vetury, R., Underwood, R.D., Kozodoy, P., DenBaars, S.P., Mishra, U.K., Appl. Phys. Lett. 71 (1997) 1204.Google Scholar
13. Sakai, A, Sunakawa, H, Usui, A, Appl. Phys. Lett. 71 (1997) 2259.Google Scholar
14. Yu, Zhonghai, Johnson, M.A.L., McNulty, T., Brown, J.D., Cook, J.W. Jr and Schetzina, J.F., MRS Internet J. Nitride Semicond. Res. 3 (1998) 6.Google Scholar
15. Park, J., Grudowski, P.A., Eiting, C.J., and Dupuis, R.D., Appl. Phys. Lett. 73, 333 (1998).Google Scholar
16. Li, X.,m Bishop, S.G., and Coleman, J.J., Appl. Phys. Lett. 73. 1179 (1998).Google Scholar
17. Nam, O, Bremser, M.D., Ward, B.L., Nemanich, R.J., Davis, R.F., Jpn. J. Appl. Phys. 36 (1997) L532.Google Scholar
18. Zheleva, Tsvetanka S., Nam, Ok-Hyun, Bremser, Micheal D., Davis, Robert F., Appl. Phys. Lett. 71 (1997) 2472.Google Scholar
19. Nam, O-H, Bremser, MD, Zheleva, TS, Davis, RF, Appl. Phys. Lett. 71 (1997) 2638.Google Scholar
20. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M., Chocho, K., Appl. Phys. Lett. 72 (1998) 211.Google Scholar