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Epitaxial Island Growth and the Stranski-Krastanow Transition

Published online by Cambridge University Press:  17 March 2011

A.G. Cullis ,
D.J. Norris ,
T. Walther ,
M.A. Migliorato  and
M. Hopkinson
A.G. Cullis
Affiliation:
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom
D.J. Norris
Affiliation:
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom
T. Walther
Affiliation:
Institut für Anorganische Chemie, Universität Bonn, Römerstrasse 164, D-53117 Bonn, Germany
M.A. Migliorato
Affiliation:
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom
M. Hopkinson
Affiliation:
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom
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Abstract

The way in which the Stranski-Krastanow epitaxial islanding transition can be controlled by strain due to elemental segregation within the initially-formed flat ‘wetting’ layer is examined in detail. Experimentally measured critical ‘wetting’ layer thicknesses for the InxGa1−xAs/GaAs system (x = 0.25 - 1) are demonstrated to show good agreement with values calculated using a segregation model. The strain energy associated with the segregated surface layer is determined for the complete range of deposited In concentrations using atomistic simulations. The segregation-mediated driving force for the Stranski-Krastanow transition is considered to be important also for all other epitaxial systems exhibiting the transition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 696: Symposium N – Current Issues in Heteroepitaxial Growth--Stress Relaxation and Self Assembly , 2001 , N1.1
Copyright
Copyright © Materials Research Society 2002

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