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Epitaxial Growth on 2° Off-axis 4H SiC Substrates with Addition of HCl

Published online by Cambridge University Press:  01 February 2011

Jie Zhang ,
Swapna Sunkari ,
Janice Mazzola ,
Becky Tyrrell ,
Gray Stewart ,
R Stahlbush ,
J Caldwell ,
P Klein ,
Michael Mazzola  and
Janna Casady
Jie Zhang
Affiliation:
[email protected], SemiSouth Laboratories, R & D, 201 Research Boulevard, Starkville, MS, 39759, United States
Swapna Sunkari
Affiliation:
[email protected], SemiSouth Laboratories, 201 Research Boulevard, Starkville, MS, 39759, United States
Janice Mazzola
Affiliation:
[email protected], SemiSouth Laboratories, 201 Research Boulevard, Starkville, MS, 39759, United States
Becky Tyrrell
Affiliation:
[email protected], SemiSouth Laboratories, 201 Research Boulevard, Starkville, MS, 39759, United States
Gray Stewart
Affiliation:
[email protected], SemiSouth Laboratories, 201 Research Boulevard, Starkville, MS, 39759, United States
R Stahlbush
Affiliation:
[email protected], Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC, 20375, United States
J Caldwell
Affiliation:
[email protected], Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC, 20375, United States
P Klein
Affiliation:
[email protected], Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC, 20375, United States
Michael Mazzola
Affiliation:
[email protected], Mississippi State University, Department of Electrical and Computer Engineering,, Starkville, MS, 39762, United States
Janna Casady
Affiliation:
[email protected], SemiSouth Laboratories, 201 Research Boulevard, Starkville, MS, 39759, United States
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Abstract

Epitaxial growth on 3-in, 2° off-axis 4H SiC substrates has been conducted in a horizontal hot-wall CVD reactor with HCl addition. The thickness of the epiwafers ranges from 3m to 11 m and the growth rate is 7 − 7.5 m/h. Although a rougher surface and a higher triangular defect density is observed using the standard process for 4° growth, an improved process has resulted in reduced triangular defect density down to around 4 cm−2 and a smoother surface with the roughness of 1.1 nm for a 3.7 m thick epiwafer. Most interestingly, the basal plane dislocation density in the 2° off-axis epiwafers has been reduced to "negligible" levels, as confirmed by both the non-destructive UVPL mapping technique and the molten KOH etching on 2° epiwafers with thickness of around 10 m.

Keywords

morphologyepitaxychemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1069: Symposium D – Silicon Carbide 2008—Materials, Processing and Devices , 2008 , 1069-D07-10
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

[1] Bergman, J.P., ICSCRM 2007 abstract MO1-1Google Scholar
[2] Zhang, J., Mazzola, J., Sunkari, S., Stewart, G., Klien, P.B., Ward, R., Glaser, E., Lew, K.K., Gaskil, D.K., Sankin, I., Bondarenko, V., Null, D., Sheridan, D., and Mazzola, M., presented at ICSCRM2007, 2007 Google Scholar
[3] Stahlbush, R.E., Liu, K.X., Zhang, Q., and Sumakeris, J.J., Materials Science Forum Vols. 556-557 (2007), pp. 295.Google Scholar
[4] Nakamura, et al., Materials Science Forum Vols. 457-460 (2004), pp. 163–168.Google Scholar