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Epitaxial Growth of Transition Metal Silicides on Silicon

Published online by Cambridge University Press:  26 February 2011

L. J. Chen ,
H. C. Cheng  and
W. T. Lin
L. J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China.
H. C. Cheng
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China.
W. T. Lin
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China.
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Abstract

Recent progresses in the epitaxial growth of refractory metal suicides, FeSi2 and manganese suicides on silicon are reviewed.

The formation and structures of epitaxial suicides are described. Factors affecting the suicide epitaxy are examined. The lattice match criteria for the growth of epitaxial suicides are assessed. The effects of anharmonicity in the interatomic force of overlayer on the heteroepitaxial growth and pseudomorphism are discussed. The properties and possible applications of epitaxial suicides are summarized. Prospects for the study of epitaxial suicides are addressed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54 , 1985 , 245
Copyright
Copyright © Materials Research Society 1986

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Footnotes

*

Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China.

References

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