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Epitaxial Growth of Thin Films of Ferroelectric Materials at Low Temperature by Excimer Laser Ablation Technique
Published online by Cambridge University Press: 25 February 2011
Abstract
We have formed PbTIO thin films on SrTiO3 substrate (100) at low temperature of 350°C using an ArF excimer laser ablation technique. Until now, the PbTiO3 films have not been formed at the temperature lower than 500°C using other thin film techniques. The Important points In the present study are the laser excitation of the substrate during the film growth and the lattice matching between the film and the substrate. The film deposited on the SrTiO3 substrate, shows preferential orientation of the c-axis perpendicular to the substrate surface.
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- Copyright © Materials Research Society 1991