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Epitaxial Growth of Sil-xGex/Si Heterostructures by Limited Reaction Processing for Minority Carrier Device Applications

Published online by Cambridge University Press:  25 February 2011

C. A. King ,
J. L. Hoyt ,
D. B. Noble ,
C. M. Gronet ,
J. F. Gibbons ,
M. P. Scott ,
S. S. Laderman ,
T. I. Kamins  and
J. Turner
C. A. King
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
J. L. Hoyt
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
D. B. Noble
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
C. M. Gronet
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
J. F. Gibbons
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
M. P. Scott
Affiliation:
Hewlett-Packard Company, Palo Alto, CA 94306
S. S. Laderman
Affiliation:
Hewlett-Packard Company, Palo Alto, CA 94306
T. I. Kamins
Affiliation:
Hewlett-Packard Company, Palo Alto, CA 94306
J. Turner
Affiliation:
Hewlett-Packard Company, Palo Alto, CA 94306
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Abstract

In an effort to extend the performance limits of semiconductors, devices based on heterojunctions rather than homojunctions are being investigated with great interest. Heterojunctions allow certain device design constraints to be relaxed because the charge distribution, electric field, and potential can be tailored extensively, permitting better device structures to be utilized. Silicon technology today enjoys a firm grip on a large portion of the electronics industry due in part to its superior material properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 71
Copyright
Copyright © Materials Research Society 1989

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References

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