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Epitaxial Growth of Silicon Using Photochemical Vapor Deposition at a Very Low Temperature of 200º Centigrade

Published online by Cambridge University Press:  28 February 2011

M. Konagai ,
S. Nishida ,
A. Yamada ,
T. Shiimoto ,
S. Karasawa  and
K. Takahashi
M. Konagai
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2–12–1,Ohokayama, Meguro—ku, Tokyo 152, Japan
S. Nishida
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2–12–1,Ohokayama, Meguro—ku, Tokyo 152, Japan
A. Yamada
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2–12–1,Ohokayama, Meguro—ku, Tokyo 152, Japan
T. Shiimoto
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2–12–1,Ohokayama, Meguro—ku, Tokyo 152, Japan
S. Karasawa
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2–12–1,Ohokayama, Meguro—ku, Tokyo 152, Japan
K. Takahashi
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2–12–1,Ohokayama, Meguro—ku, Tokyo 152, Japan
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Abstract

A new technique for silicon epitaxial growth has been developed using mercury—sensitized photochemical vapor deposition (photo—CVD). Epitaxial thin layers were grown on (100) Si substrates at 100–300ºC from a gas mixture of Si2H6+AiH2F2+H2 by irradiation of a low pressure mercury lamp (1849A, 2537A). Refiective high energy electron diffraction (RHEED) and Raman scattering measurements showed that the epitaxial layers had good crystallinities.The epitaxial layers were characterized by secondary ion mass spectroscopy (SIMS) and the van der Pauw Hall2 measurements. The undoped Si layer showed the electron mobility of 520cm2/Vs with a carrier concentration of 3.2xl04cm

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 119
Copyright
Copyright © Materials Research Society 1986

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