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Epitaxial Growth of Refractory Silicides on Silicon

Published online by Cambridge University Press:  26 February 2011

L. J. Chen ,
H. C. Cheng ,
W. T. Lin ,
L. J. Chou  and
M. S. Fung
L. J. Chen
Affiliation:
Department of Materials Science and Engineering and Materials Science Center, National Tsing Hua University, Hsinchu, Taiwan, R.O.C.
H. C. Cheng
Affiliation:
Department of Materials Science and Engineering and Materials Science Center, National Tsing Hua University, Hsinchu, Taiwan, R.O.C.
W. T. Lin
Affiliation:
Department of Materials Science and Engineering and Materials Science Center, National Tsing Hua University, Hsinchu, Taiwan, R.O.C.
L. J. Chou
Affiliation:
Department of Materials Science and Engineering and Materials Science Center, National Tsing Hua University, Hsinchu, Taiwan, R.O.C.
M. S. Fung
Affiliation:
Department of Materials Science and Engineering and Materials Science Center, National Tsing Hua University, Hsinchu, Taiwan, R.O.C.
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Abstract

Epitaxial refractory silicides were grown on silicon by solid phase epitaxy method. Transmission electron microscopy has been performed to study the microstructures of epitaxial layers and their orientation relationships with respect to substrate Si.

Metal thin films, electron-gun deposited, or sputtered metal-silicon films were annealed in N2 ambient or in vacuum at 200°C-1100°C. Substrate heating, two step annealing and ion beam mixing were applied to induce the growth and improve the quality of epitaxial films. In this paper, formation and structures of epitaxial CrSi2, VSi2, ZrSi2, MoSi2 and WSi2 are presented. Preliminary results of the epitaxial growth of TiSi2, TaSi2 and NbSi2 are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 375
Copyright
Copyright © Materials Research Society 1985

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References

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