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Epitaxial Growth of Rare-Earth Gallates on Single-Crystal Oxide Substrates

Published online by Cambridge University Press:  16 February 2011

Jonathan S. Morrell ,
Ziling B. Xue ,
Eliot D. Specht  and
David B. Beach
Jonathan S. Morrell
Affiliation:
Department of Chemistry, University of Tennessee, Knoxville, TN
Ziling B. Xue
Affiliation:
Department of Chemistry, University of Tennessee, Knoxville, TN
Eliot D. Specht
Affiliation:
Metal and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, TN
David B. Beach
Affiliation:
Chemical and Analytical Sciences Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6197, [email protected]
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Abstract

Epitaxial films of lanthanum gallate, praseodymium gallate, and neodymium gallate were prepared on [100] strontium titanate and [100] lanthanum aluminate single crystal substrates using solution techniques. The solutions employed were mixed-metal methoxyethoxides in 2-methoxyethanol. Films were prepared by spin-coating with a partially hydrolyzed solution, followed by firing at 850 °C for 20 minutes in air. Theta/2-theta scans revealed only [h00] reflections and omega scans (rocking curves) indicated good out-of-plane orientation. Pole figures and phi scans revealed good in-plane orientation and a [100] || [100] epitaxial relationship between the film and the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 547: Symposium DD – Solid-State Chemistry of Inorganic Materials II , 1998 , 309
Copyright
Copyright © Materials Research Society 1999

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