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Epitaxial Growth of Ni on Si by Ion Beam Assisted Deposition

Published online by Cambridge University Press:  25 February 2011

K. S. Grabowski ,
R. A. Kant  and
S. B. Qadr
K. S. Grabowski
Affiliation:
Naval Research Laboratory, Code 4670, Washington, DC 20375
R. A. Kant
Affiliation:
Naval Research Laboratory, Code 4670, Washington, DC 20375
S. B. Qadr
Affiliation:
Sachs/Freeman Associates, Inc., Landover, MD 20785
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Abstract

Epitaxial Ni films were grown on Si(111) substrates to a thickness of about 500 nm by ion beam assisted deposition at room temperature. The films were grown using 25-keV-Ni ions and electron-beam evaporation of Ni at a relative arrival ratio of one ion for every 100 Ni vapor atoms. The ion beam and evaporant flux were both incident at 45° to the sample surface. Standard θ-2θ X-ray diffraction scans revealed the extent of crystallographic texture, while Ni {220} pole figure measurements identified the azimuthal orientation of Ni in the plane of the film. Films grown without the ion beam consisted of nearly randomly oriented fine grains of Ni whereas with bombardment the Ni (111) plane was found parallel to the Si (111) plane. In all the epitaxial cases the Ni [110] direction was perpendicular to the axis of the ion beam, suggesting that the azimuthal orientation of the film was determined by channeling of the ion beam down {110} planar channels in the Ni film. Additional experiments with different ions, energies, and substrates revealed their influence on the degree of epitaxy obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 279
Copyright
Copyright © Materials Research Society 1989

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References

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