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Epitaxial Growth Of High Quality Sic By Sublimation Close Space Technique

Published online by Cambridge University Press:  10 February 2011

S. Nishino ,
T. Yoshida  and
Y. Nishio
S. Nishino
Affiliation:
Department of Electronics and Information Science Faculty of Engineering and Design, Kyoto Institute of Technology Matsugasaki, Sakyo-ku, Kyoto 606, Japan
T. Yoshida
Affiliation:
Department of Electronics and Information Science Faculty of Engineering and Design, Kyoto Institute of Technology Matsugasaki, Sakyo-ku, Kyoto 606, Japan
Y. Nishio
Affiliation:
Department of Electronics and Information Science Faculty of Engineering and Design, Kyoto Institute of Technology Matsugasaki, Sakyo-ku, Kyoto 606, Japan
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Abstract

Semiconducting SiC is expected for power devices and higher breakdown voltage of the device is required. Growth rate of epilayer by conventional CVD is about 3 μ m/h. To make a thick epilayer, more than 10 hours are needed. To minimize the growth time, we propose sublimation epitaxial method by close space technique (CST). In the CST, source ( polycrystalline 3C–SiC plate) and substrate is closely separated by spacer and source material is sublimed and transferred to the substrate in argon. Epitaxial layers with specular surface were obtained on 6H–SiC substrates at a substrate temperature around 2200 °C and growth rate was about 100 μ/h. Nitrogen-bound exciton was observed by PL measurement at 2 K in the epilayer when 3C–SiC plate with high purity was employed as the source material. Crystallinity of the epilayer was characterized by Raman spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 307
Copyright
Copyright © Materials Research Society 1998

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