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Epitaxial Growth of Ferroelectric Pb(Zr,Ti)O3 Layers on GaAs

Published online by Cambridge University Press:  19 August 2014

Benjamin Meunier ,
Lamis Louahadj ,
David Le Bourdais ,
Ludovic Largeau ,
Guillaume Agnus ,
Philippe Lecoeur ,
Valérie Pillard ,
Lucie Mazet ,
Romain Bachelet  and
Philippe Regreny
...Show all authors
Benjamin Meunier
Affiliation:
Ecole Centrale de Lyon, INL-CNRS, Ecully, France
Lamis Louahadj
Affiliation:
RIBER SA, Bezons, France
David Le Bourdais
Affiliation:
Université Paris-Sud, Institut d’Electronique Fondamentale, Orsay, France
Ludovic Largeau
Affiliation:
LPN-CNRS, Marcoussis, France
Guillaume Agnus
Affiliation:
Université Paris-Sud, Institut d’Electronique Fondamentale, Orsay, France
Philippe Lecoeur
Affiliation:
Université Paris-Sud, Institut d’Electronique Fondamentale, Orsay, France
Valérie Pillard
Affiliation:
Université Paris-Sud, Institut d’Electronique Fondamentale, Orsay, France
Lucie Mazet
Affiliation:
Ecole Centrale de Lyon, INL-CNRS, Ecully, France
Romain Bachelet
Affiliation:
Ecole Centrale de Lyon, INL-CNRS, Ecully, France
Philippe Regreny
Affiliation:
Ecole Centrale de Lyon, INL-CNRS, Ecully, France
Claude Botella
Affiliation:
Ecole Centrale de Lyon, INL-CNRS, Ecully, France
Geneviève Grenet
Affiliation:
Ecole Centrale de Lyon, INL-CNRS, Ecully, France
David Albertini
Affiliation:
INSA, INL-CNRS, Villeurbanne, France
Catherine Dubourdieu
Affiliation:
Ecole Centrale de Lyon, INL-CNRS, Ecully, France
Brice Gautier
Affiliation:
INSA, INL-CNRS, Villeurbanne, France
Guillaume Saint-Girons
Affiliation:
Ecole Centrale de Lyon, INL-CNRS, Ecully, France
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Abstract

Ferroelectric epitaxial Pb(Zr,Ti)O3 (PZT) layers were grown by pulsed laser deposition on SrTiO3/GaAs templates fabricated by molecular beam epitaxy. The templates present an excellent structural quality and the SrTiO3/GaAs is abrupt at the atomic scale thanks to surface Ti pre-treatment. The PZT layers contain a- and c- domains, as shown by X-Ray diffraction analyses. Piezoforce microscopy experiments and macroscopic electrical characterizations indicate that PZT is ferroelectric. A relative dielectric permittivity of 164 is extracted from these measurements.

Keywords

epitaxyferroelectricoxide
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1675: Symposium K/RR – Synthesis, Characterization and Applications of Functional Materials—Thin Films and Nanostructures , 2014 , pp. 93 - 98
Copyright
Copyright © Materials Research Society 2014 

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References

REFERENCES

McKee, R.A., Walker, F.J. and Chisholm, M.F., Phys. Rev. Lett. 81, 3014, (1998)CrossRefGoogle Scholar
Droopad, R., Yu, Z., Ramdani, J., Hilt, L., Curless, J., Overgaard, C., Edwards, J.L., Finder, J., Eisenbeiser, K., Wang, J., Kaushik, V., Ngyuen, B.-Y., and Ooms, B., Journal of Crystal Growth 227-228, 936, (2001)CrossRefGoogle Scholar
Liang, Y., Kulik, J., Eschrich, T.C., Droopad, R., Yu, Z., and Maniar, P., Applied Physics Letters 85, 1217, (2004)CrossRefGoogle Scholar
Lin, A., Hong, X., Wood, V., Verevkin, A.A., Ahn, C.H., McKee, R.A., Walker, F.J., and Specht, E.D., Applied Physics Letters 78, 2034, (2001)CrossRefGoogle Scholar
Baek, S., Park, J., Kim, D., Aksyuk, V., Das, R., Bu, S., Felker, D., Lettieri, J., Vaithyanathan, V., Bharadwaja, S., Bassiri-Gharb, N., Chen, Y., Sun, H., Folkman, C., Jang, H., Kreft, D., Streiffer, S., Ramesh, R., Pan, X., Trolier-McKinstry, S., Schlom, D., Rzchowski, M., Blick, R., and Eom, C., Science 334, 958 (2011)CrossRefGoogle Scholar
Yin, S., Niu, G., Vilquin, B., Gautier, B., Rhun, G.L., Defay, E., and Robach, Y., Thin Solid Films 520, 4595, (2012)Google Scholar
Borowiak, A.S., Niu, G., Pillard, V., Agnus, G., Lecoeur, P., Albertini, D., Baboux, N., Gautier, B., and Vilquin, B., Thin Solid Films 520, 4604, (2012)CrossRefGoogle Scholar
Scigaj, M., Dix, N., Fina, I., Bachelet, R., Warot-Fonrose, B., Fontcuberta, J., and Sánchez, F., Applied Physics Letters 102, 112905, (2013)CrossRefGoogle Scholar
Niu, G., Yin, S., Saint-Girons, G., Gautier, B., Lecoeur, P., Pillard, V., Hollinger, G., and Vilquin, B., Microelectronic Engineering 88, 1232, (2011)CrossRefGoogle Scholar
Contreras-Guerrero, R., Veazey, J.P., Levy, J., and Droopad, R., Applied Physics Letters 102, 012907, (2013)CrossRefGoogle Scholar
Huang, W., Wu, Z.P. and hao, J.H., Appl. Phys. Lett. 94, 032905 (2009)CrossRefGoogle Scholar
Louahadj, L., Bachelet, R., Regreny, P., Largeau, L., Dubourdieu, C. and Saint-Girons, G., submitted to Thin Solid Films Google Scholar
Ley, L., Pollack, R.A., McFeely, F.R., Kowalczyk, S.P., Shirley, D.A., Phys. Rev. B 9, 600 (1974)CrossRefGoogle Scholar
Wilmsen, C.W., Thin Solid Films, 39, 105 (1976)CrossRefGoogle Scholar
Isarakorn, D., Briand, D., Gariglio, S., Sambri, A., Stucki, N., Triscone, J., Guy, F., Reiner, J., Ahn, C., and de Rooij, N., Smart Materials Research 2012, 426048, (2012)Google Scholar
Fujisawa, H., Nakashima, S., Kaibara, K., Shimizu, M. and Niu, H., Jap. J. Appl. Phys. 38, 5392, (1999)CrossRefGoogle Scholar