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Epitaxial Growth of Fe3Si Thin Films on (100) Magnesia Substrates

Published online by Cambridge University Press:  26 February 2011

Kensuke Akiyama
Affiliation:
[email protected], Kanagawa Industrial Technology Center, Electronics, 705-1 Shimoimaizumi, Ebina, 243-0435, Japan, +81-46-236-1500, +81-46-236-1525
Satoru Kaneko
Affiliation:
[email protected], Kanagawa Industrial Technology Center, Electronics, 705-1 Shimoimaizumi, Ebina, 243-0435, Japan
Teiko Kadowaki
Affiliation:
[email protected], Kanagawa Industrial Technology Center, Electronics, 705-1 Shimoimaizumi, Ebina, 243-0435, Japan
Yasuo Hirabayashi
Affiliation:
[email protected], Kanagawa Industrial Technology Center, Electronics, 705-1 Shimoimaizumi, Ebina, 243-0435, Japan
Azusa Kyoduka
Affiliation:
[email protected], Tokyo Polytechnic University, 21583 Iiyama, Atsugi, 243-0297, Japan
Yutaka Sawada
Affiliation:
[email protected], Tokyo Polytechnic University, 21583 Iiyama, Atsugi, 243-0297, Japan
Yoshihiko Kobayashi
Affiliation:
[email protected], University of Electro-Communications, Applied Physics and Chemistry, 1-5-1 Chofugaoka, Chofu, 182-8585, Japan
Kichizo Asai
Affiliation:
[email protected], University of Electro-Communications, Applied Physics and Chemistry, 1-5-1 Chofugaoka, Chofu, 182-8585, Japan
Hiroshi Funakubo
Affiliation:
[email protected], Tokyo Institute of Technology, Innovative and Engineered Materials, 4259 Nagatsuta, Midori-ku, Yokohama, 226-8502, Japan
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Abstract

A high-quality (100)-oriented epitaxial Fe3Si films were grown on (100) MgO substrates by RF-magnetron sputtering. The full width at half maximum of the Fe3Si 400 rocking curve was 0.18°, when the film was grown at 750°C. The epitaxial films of 100 nm thicknesses had a smooth continuous surface. The coercive field (Hc) was approximately 10 Oe, and the saturation magnetization (Ms) was 900 emu/cm3, which are almost the same as those of bulk Fe3Si. The anisotropy constant (K1) of magnetization indicated that the epitaxial Fe3Si films grown at 750°C mainly consisted of long range ordering phase (DO3 phase) and that the epitaxial films post-annealed at 900°C was constituted with ordering phase.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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