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Epitaxial growth of Cr [001] on LiF [001]

Published online by Cambridge University Press:  28 February 2011

J. Mattson ,
M. B. Brodsky ,
J. Ketterson  and
H. You
J. Mattson
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439 Department of Physics and Astronomy, Northwestern University, Evanston, IL 60201
M. B. Brodsky
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439
J. Ketterson
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, IL 60201
H. You
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439
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Abstract

We report X-ray diffraction and in-situ RHEED( Reflection High Energy Electron Diffraction) measurements on Cr thin films deposited on LiF[001] single crystal substrates for thicknesses up to 300 nm and for substrate temperatures from 30 to 450°C. From these measurements we determine the range of deposition conditions necessary for epitaxial growth and the stress in these films as a function of film thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 231
Copyright
Copyright © Materials Research Society 1990

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