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Epitaxial Growth of Copper, Silver and Gold on a Semiconducting Layered Material: Tungsten Disulfide

Published online by Cambridge University Press:  26 February 2011

D. L. Doering ,
F. S. Ohuchi ,
W. Jaegermann  and
B. A. Parkinson
D. L. Doering
Affiliation:
Department of Physics, Wesleyan University, Middletown, CT 06457–6036
F. S. Ohuchi
Affiliation:
E. I. DuPont de Nemours and Co., Experimental Station, Wilmington, DE 19898
W. Jaegermann
Affiliation:
E. I. DuPont de Nemours and Co., Experimental Station, Wilmington, DE 19898
B. A. Parkinson
Affiliation:
E. I. DuPont de Nemours and Co., Experimental Station, Wilmington, DE 19898
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Abstract

The growth of copper, silver and gold thin films on tungsten disulfide has been examined as a model of metal contacts on a layered semiconductor. All three metals were found to grow epitaxially on the WS2. However, Cu appears to form a discontinuous film while Au and Ag grow layer by layer. Such epitaxial growth is somewhat surprising since there is a large lattice mismatch between the metals and the WS2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 41
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

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4.Ohuchi, F. S., Jaegermann, W. and Parkinson, B. A., submitted for publication.Google Scholar