Hostname: page-component-848d4c4894-cjp7w Total loading time: 0 Render date: 2024-07-04T19:25:31.238Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial Growth of Atomically Flat Spin Dependent Tunneling Junctions

Published online by Cambridge University Press:  10 February 2011

Y. Li ,
S. X. Wang ,
F. B. Mancoff  and
B. M. Clemens
Y. Li
Affiliation:
Department of Material Science and Engineering, Stanford University, Stanford, CA 94305
S. X. Wang
Affiliation:
Department of Material Science and Engineering, Stanford University, Stanford, CA 94305
F. B. Mancoff
Affiliation:
Department of Material Science and Engineering, Stanford University, Stanford, CA 94305
B. M. Clemens
Affiliation:
Department of Material Science and Engineering, Stanford University, Stanford, CA 94305
Get access

Abstract

Spin dependent tunneling junctions with epitaxially grown underlayers have been investigated to examine the possibility of achieving very flat and uniform barrier layers. Pt/Ni80Fe20 /Fe50Mn50/Ni80Fe20layers were deposited on sapphire (0001) substrates at different temperatures and monitored by in-situ reflection high energy electron diffraction (RHEED). The surface morphology has been found to depend strongly on the growth temperature. X-ray diffraction and magnetic hysteresis loop measurements were also performed to characterize the film structures

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 570: Symposium V – Epitaxial Growth , 1999 , 73
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCE

1. Moodera, J.S., Kinder, L. R., Wong, T. M., and Meservey, R., Phys. Rev. Lett. 74, 3273 (1995).Google Scholar
2. Daughton, J. M., Thin Solid Films 216, 162 (1992).Google Scholar
3. Simmons, J. G., J. AppI. Phys. 34, 1793 (1963).Google Scholar
4. Tsuge, H., and Mitsuzuka, T., Appl. Phys. Lett. 71, 22, 3296 (1997).Google Scholar
5. Li, X. W., Lu, Y., Gong, G. Q., Xiao, G., Gupta, A., Lecoeur, P., Sun, J. Z., Wang, Y. Y., and Dravid, V. P., J. Appl. Phys. 81, 5509 (1997).Google Scholar
6. Li, X. W., Gupta, A.. Xiao, G., Qian, W. and Dravid, V. P., Appl. Phys. Lett. 73, 22, 3282 (1998).Google Scholar
7. Bobo, j. F., Mancoff, F. B., Bessho, K., Sharma, M., Sin, K., Guarisco, D., Wang, S. X., and Clemens, B. M., J. Appl. Phys. 83, 6685 (1998).Google Scholar