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Epitaxial Growth of AlN on Si Substrates with Intermediate 3C-SiC as Buffer Layers
Published online by Cambridge University Press: 10 February 2011
Abstract
Single crystalline AlN was successfully grown on a 3C-SiC coated Si (111) substrate by organometallic vapor phase epitaxy. The 3C-SiC film was obtained via the conversion of the Si near-surface region to SiC using gas-source molecular beam epitaxy. The quality of the AlN was mainly controlled by that of the SiC. The effects of Si pits and SiC hillocks formed during the conversion on subsequent AlN growth are discussed. Process optimization is suggested to improve the SiC buffer layer for subsequent AlN deposition.
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- Copyright © Materials Research Society 1999
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