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The Epitaxial Growth of Al on Hydrogen Terminated Si(100) Substrates with and Without Ion Bombardment

Published online by Cambridge University Press:  25 February 2011

R. L. McEachernt ,
Dirk Laszig  and
W. L. Brownt
R. L. McEachernt*
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Dirk Laszig*
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733
W. L. Brownt
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
*
* Lawrence Livermore National Laboratory, Livermore, CA 94550
** Deutsche Telekom, D 4400 Meunster/Westf., Germany
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Abstract

We have demonstrated that aluminum can be grown epitaxially on H-terminated Si(100) substrates under modest vacuum conditions using thermal deposition. The effect of 1 keV to 4 keV ion bombardment during deposition was found to be either minimal or detrimental. Preliminary results from sputter-deposited Al films show very different behavior, with the films tending to relax from the epitaxial (110) texture to a (111) texture.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 953
Copyright
Copyright © Materials Research Society 1992

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References

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