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Epitaxial Growth of 3C-SiC on T-shape columnar Si Substrates

Published online by Cambridge University Press:  15 March 2011

S. Nishino ,
A. Shoji ,
T. Nishiguchi  and
S. Ohshima
S. Nishino
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto, 606-8585, Japan Tel: +81-75-724-7415, Fax: +81-75-724-7400, [email protected]
A. Shoji
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto, 606-8585, Japan Tel: +81-75-724-7415, Fax: +81-75-724-7400
T. Nishiguchi
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto, 606-8585, Japan Tel: +81-75-724-7415, Fax: +81-75-724-7400
S. Ohshima
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto, 606-8585, Japan Tel: +81-75-724-7415, Fax: +81-75-724-7400
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Abstract

Cubic silicon carbide (3C-SiC) is a suitable semiconductor material for high temperature, high power and high frequency electronic devices, because of its wide bandgap, high electron mobility and high saturated electron drift velocity. The usage of Si substrates has the advantage of large area substrates for the growth of 3C-SiC layers. However, large lattice mismatch between 3C-SiC and Si (>20%) has caused the generation of defects such as misfit dislocations, twins, stacking faults and threading dislocations at the SiC/Si interface. Lateral epitaxial overgrowth (ELOG) of 3C-SiC on Si substrates using SiO2 has been reported to reduce the defect density. In this report, epitaxial growth of 3C-SiC on T-shape patterned (100) Si substrates has been investigated to reduce interfacial defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 815 , 2004 , J2.2
Copyright
Copyright © Materials Research Society 2004

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