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Epitaxial Growth of (110) KnbO3 Films on (100) MgO Substrates via Sol-Gel Processing

Published online by Cambridge University Press:  15 February 2011

Garo J. Derderian ,
James D. Barrie ,
Kenneth A. Aitchison  and
Martha L. Mecartney
Garo J. Derderian
Affiliation:
Mechanics and Materials Technology Center, The Aerospace Corporation, M2/248, P.O. Box 92957, Los Angeles, CA 90009. Materials Science and Engineering / Department of Mechanical and Aerospace Engineering, University of California at Irvine, Irvine CA 92717.
James D. Barrie
Affiliation:
Mechanics and Materials Technology Center, The Aerospace Corporation, M2/248, P.O. Box 92957, Los Angeles, CA 90009.
Kenneth A. Aitchison
Affiliation:
Mechanics and Materials Technology Center, The Aerospace Corporation, M2/248, P.O. Box 92957, Los Angeles, CA 90009.
Martha L. Mecartney
Affiliation:
Materials Science and Engineering / Department of Mechanical and Aerospace Engineering, University of California at Irvine, Irvine CA 92717.
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Abstract

Epitaxial, single phase (110) KnbO3 films were grown on (100) MgO substrates using a sol-gel process employing ethoxide precursors in methanol. The degree of epitaxy was dependent on both the annealing temperature and the amount of potassium in the film. Excess potassium in the sol-gel solution (K/Nb = 1.2) was necessary to produce single phase films. An amorphous or polycrystalline MgO interfacial layer was observed in some films, postulated to have developed after nucleation of KnbO3 and due to a highly defective surface layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 341: Symposium F – Epitaxial Oxide Thin Films and Heterostructures , 1994 , 277
Copyright
Copyright © Materials Research Society 1994

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