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Epitaxial Growth and Luminescence Characterization of Si-based Double Heterostructures Light-emitting Diodes with Iron Disilicide Active Region

Published online by Cambridge University Press:  01 February 2011

Takashi Suemasu ,
Cheng Li ,
Tsuyoshi Sunohara ,
Yuta Ugajin ,
Ken'ichi Kobayashi ,
Shigemitsu Murase  and
Fumio Hasegawa
Takashi Suemasu
Affiliation:
[email protected], University of Tsukuba, Institute of Applied Physics, 1-1-1 Tennohdai, Tsukuba, 3058573, Japan
Cheng Li
Affiliation:
[email protected], University of Tsukuba, Institute of Applied Physics, 1-1-1 Tennohdai, Tsukuba, 3058573, Japan
Tsuyoshi Sunohara
Affiliation:
[email protected], Xiamen University, Department of Physics, Xiamen, 361005, China, People's Republic of
Yuta Ugajin
Affiliation:
[email protected], University of Tsukuba, Institute of Applied Physics, Ibaraki, 305-8573, Japan
Ken'ichi Kobayashi
Affiliation:
[email protected], University of Tsukuba, Institute of Applied Physics, Ibaraki, 305-8573, Japan
Shigemitsu Murase
Affiliation:
[email protected], University of Tsukuba, Institute of Applied Physics, Ibaraki, 305-8573, Japan
Fumio Hasegawa
Affiliation:
[email protected], University of Tsukuba, Institute of Applied Physics, Ibaraki, 305-8573, Japan
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Abstract

We have epitaxially grown Si/β-FeSi2/Si (SFS) structures with β-FeSi2 particles or β-FeSi2 continuous films on Si substrates by molecular beam epitaxy (MBE), and observed 1.6 μm electroluminescence (EL) at room temperature (RT). The EL intensity increases with increasing the number of β-FeSi2 layers. The origin of the luminescence was discussed using time-resolved photoluminescence (PL) measurements. It was found that the luminescence originated from two sources, one with a short decay time (τ∼10 ns) and the other with a long decay time (τ∼100 ns). The short decay time was due to carrier recombination in β-FeSi2, whereas the long decay time was due probably to a defect-related D1 line in Si.

Keywords

Siepitaxydevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 958: Symposium L – Group IV Semiconductor Nanostructures—2006 , 2006 , 0958-L01-05
Copyright
Copyright © Materials Research Society 2007

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References

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