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Epitaxial Film Growth of Single Crystal Ce/V Prepared by Molecular-Beam Epitaxy
Published online by Cambridge University Press: 26 February 2011
Abstract
The growth of epitaxial films of cerium (Ce)/vanadium (V)/on single crystal sapphires (α-A1203) was studied by in-situ reflection high energy electron diffraction and x-ray scattering. For the first time Ce(111) single crystal film was grown on V(110)/α-A12O3 (1120) in the Frank-van der Merwe mode. A new epitaxial orientation, different from the well known Nishiyama-Wasserman or Kurdjumov-Sachs orientations is found in the present study. Subsequent V(110) layers grow epitaxially with three equivalent domains.
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