Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-25T15:42:02.441Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial Ferroelectric BaTiO3 Thin Films for Microphotonic Applications

Published online by Cambridge University Press:  15 March 2011

F. Niu ,
A.R. Teren ,
B.H. Hoerman  and
B.W. Wessels
F. Niu
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
A.R. Teren
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
B.H. Hoerman
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
B.W. Wessels
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
Get access

Abstract

Epitaxial ferroelectric BaTiO3 thin films have been developed as a material for microphotonics. Efforts have been directed toward developing these materials for thin film electro-optic modulators. Films were deposited by metalorganic chemical vapor deposition (MOCVD) on both MgO and silicon substrates. The electro-optic properties of the thin films were measured. For BaTiO3 thin films grown on (100) MgO substrates, the effective electro-optic coefficient, reff depended on the magnitude and direction of the electric field. Coefficients as high as 260 pm/V have been measured. Investigation of BaTiO3 films on silicon has been undertaken. Epitaxial BaTiO3 thin films were deposited by MOCVD on (100) MgO layers grown on silicon (100) substrates by metal-organic molecular beam epitaxy (MOMBE). The MgO serves as the low index optical cladding layer as well as an insulating layer. X-ray diffraction and transmission electron microscopy (TEM) indicated that BaTiO3 was epitaxial with an orientational relation given by BaTiO3 (100)//Si (100) and BaTiO3[011]//Si [011]. Polarization measurements indicated that the BaTiO3 epitaxial films on Si were in the ferroelectric state.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 637: Symposium E – Microphotonics-Materials, Physics, and Applications , 2000 , E1.9
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Gill, D.M., Block, B.A., Conrad, C.W., Wessels, B.W., and Wessels, B.W., Ho, S.T., Appl. Phys.Lett., 69, 2968(1996).Google Scholar
2 Gill, D.M., Conrad, C.W., Ford, G., Wesels, B.W., and Ho, S.T., Appl.Phys.Lett. 71, 1783(1997).Google Scholar
3 Niu, F., Hoerman, B.H., Wessels, B.W., J.Vac.Sci.&Technol. B18, 2146(2000).Google Scholar
4 Niu, F., Hoerman, B.H., Wessels, B.W., Mater. Res. Soc. Symp. Proc. 606 (1999).Google Scholar
5 Teren, A.R., Belot, J.A., Edleman, N.L., Marks, T.J., Wessels, B.W., Chemical Vapor Deposition 6, 175(2000).Google Scholar
6 Hoerman, B. H., Ford, G. M., Kaufmann, L. D. and Wessels, B. W., Appl. Phys. Lett. 73, 2248 (1998).Google Scholar
7 Hoerman, B. H., Nichols, B. M., Nystrom, M. J. and Wessels, B. W., Appl. Phys. Lett. 75, 2707 (1999).Google Scholar
8 Hoerman, B. H., Nichols, B. M., Teren, A. R. and Wessels, B. W., Mat. Res. Soc. Symp. Proc. 597,157 (1999).Google Scholar
9 Nystrom, M. J., “Structural and optical properties of stontium barium niobate and potasium niobate thin films prepared by metalorganic chemical vapor deposition”, PhD Thesis, Northwestern University, 1996.Google Scholar
10 Nystrom, M. J. and Wessels, B. W., Mat. Res. Soc. Symp. Proc. 453, 259 (1997).Google Scholar
11 Zolotoyabko, E., Quintana, J. P., Hoerman, B. H. and Wessels, B. W., to be submitted (2000).Google Scholar
12 Kuwata, J., Uchino, K. and Nomura, S., Ferroelectrics 22, 863 (1979).Google Scholar
13 Speck, J. S. and Pompe, W., J. Appl. Phys. 76, 466 (1994).Google Scholar