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Epitaxial Dy2O3 Thin Films Grown on Ge(100) Substrates by Molecular Beam Epitaxy

Published online by Cambridge University Press:  01 February 2011

Md. Nurul Kabir Bhuiyan
Affiliation:
[email protected], Katholieke Universiteit Leuven, Department of Physics and Astronomy, Leuven, Belgium
Mariela Menghini
Affiliation:
[email protected], Katholieke Universiteit Leuven, Department of Physics and Astronomy, Leuven, Belgium
Christel Dieker
Affiliation:
[email protected], Christian-Albrechts Universität zu Kiel, Mikrostrukturanalytik, Kiel, Germany
Jin Won Seo
Affiliation:
[email protected], Katholieke Universiteit Leuven, Department of Metallurgy and Materials Engineering, Leuven, Belgium
Jean-Pierre Locquet
Affiliation:
[email protected], Katholieke Universiteit Leuven, Department of Physics and Astronomy, Leuven, Belgium
Roumen Vitchev
Affiliation:
[email protected], Flemish Institute for Technological Research, VITO Materials, Mol, Belgium
Chiara Marchiori
Affiliation:
[email protected], IBM Research GmbH, Zurich Research Laboratory, Rueschlikon, Switzerland
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Abstract

Dysprosium oxide (Dy2O3) films are grown epitaxially on high mobility Ge(100) substrates by molecular beam epitaxy system. Reflection high energy electron diffraction patterns and X-ray diffraction spectra show that single crystalline cubic Dy2O3 films are formed on Ge(100) substrates. The epitaxial-relationship is identified as Dy2O3 (110)║Ge(100) and Dy2O3 [001]║Ge[011]. Atomic force microscopy results show that the surface of the Dy2O3 film is uniform, flat and smooth with root mean square surface roughness of about 4.6Å. X-ray photoelectron spectroscopy including depth profiles confirms the composition of the films being close to Dy2O3. TEM measurements reveal a sharp, crystalline interface between the oxide and Ge.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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