Hostname: page-component-cd9895bd7-jkksz Total loading time: 0 Render date: 2024-12-27T02:04:22.595Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial Dy2O3 Thin Films Grown on Ge(100) Substrates by Molecular Beam Epitaxy

Published online by Cambridge University Press:  01 February 2011

Md. Nurul Kabir Bhuiyan ,
Mariela Menghini ,
Christel Dieker ,
Jin Won Seo ,
Jean-Pierre Locquet ,
Roumen Vitchev  and
Chiara Marchiori
Md. Nurul Kabir Bhuiyan
Affiliation:
[email protected], Katholieke Universiteit Leuven, Department of Physics and Astronomy, Leuven, Belgium
Mariela Menghini
Affiliation:
[email protected], Katholieke Universiteit Leuven, Department of Physics and Astronomy, Leuven, Belgium
Christel Dieker
Affiliation:
[email protected], Christian-Albrechts Universität zu Kiel, Mikrostrukturanalytik, Kiel, Germany
Jin Won Seo
Affiliation:
[email protected], Katholieke Universiteit Leuven, Department of Metallurgy and Materials Engineering, Leuven, Belgium
Jean-Pierre Locquet
Affiliation:
[email protected], Katholieke Universiteit Leuven, Department of Physics and Astronomy, Leuven, Belgium
Roumen Vitchev
Affiliation:
[email protected], Flemish Institute for Technological Research, VITO Materials, Mol, Belgium
Chiara Marchiori
Affiliation:
[email protected], IBM Research GmbH, Zurich Research Laboratory, Rueschlikon, Switzerland
Get access

Abstract

Dysprosium oxide (Dy2O3) films are grown epitaxially on high mobility Ge(100) substrates by molecular beam epitaxy system. Reflection high energy electron diffraction patterns and X-ray diffraction spectra show that single crystalline cubic Dy2O3 films are formed on Ge(100) substrates. The epitaxial-relationship is identified as Dy2O3 (110)║Ge(100) and Dy2O3 [001]║Ge[011]. Atomic force microscopy results show that the surface of the Dy2O3 film is uniform, flat and smooth with root mean square surface roughness of about 4.6Å. X-ray photoelectron spectroscopy including depth profiles confirms the composition of the films being close to Dy2O3. TEM measurements reveal a sharp, crystalline interface between the oxide and Ge.

Keywords

molecular beam epitaxy (MBE)RHEEDtransmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1252: Symposia I/J – Materials and Devices for End-of-Roadmap and Beyond CMO's Scaling , 2010 , 1252-I03-01
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Dimoulas, A. Brunco, D. P. Ferrari, S. Seo, J. W. Panayiotatos, Y. Sotiropoulos, A. Conard, T., Caymax, M. Spiga, S. Fanciulli, M. CDieker, h. Evangelou, E. K. Galata, S. Housa, M., Heyns, M. M. Thin Solid Films 515, 6337 (2007).Google Scholar
2 Lee, T. Rhee, S. J. Kang, C. Y. Zhu, F. Kim, H. Choi, C. Ok, I. Zhang, M. Krishnan, S. Thareja, G. and Lee, J. C. IEEE Electron Device Letters 27, 640 (2006).Google Scholar
3 Seo, J. W. CDieker, h. Locquet, J. -P. Mavrou, G. and Dimoulas, A. Appl. Phys. Lett. 87, 221906 (2005).Google Scholar
4 Molle, Alessandro, Bhuiyan, Md. Nurul Kabir, Tallarida, Grazia, and Fanciulli, Marco, Appl. Phys. Lett. 89, 083504 (2006).Google Scholar
5 Molle, Alessandro, Perego, Michele, Bhuiyan, Md. Nurul Kabir, Wiemer, Claudia, Tallarida, Grazia, and Fanciulli, Marco, J. Appl. Phys. 102, 034513 (2007).Google Scholar
6 Jeon, Sanghun and Hwang, Hyunsang, J. Appl. Phys. 93, 6393 (2003).Google Scholar
7 Ahn, et al. , United States patents, US 2005/0023594 A1 and US 2005/0124175 A1.Google Scholar
8 Laha, Apurba, Osten, H. J. and Fissel, A. Appl. Phys. Lett. 89, 143514 (2006).Google Scholar
9 Molle, Alessandro, Wiemer, Claudia, Bhuiyan, Md. Nurul Kabir, Tallarida, Grazia, and Fanciulli, Marco, Appl. Phys. Lett. 90, 193511 (2007).Google Scholar
10Powder Diffraction File (PDF) database, International Centre for Diffraction Data (ICDD), File No. PDF 04-002-5116.Google Scholar
11 Han, K. Zhang, Y. Cheng, T. Fang, Z. Gao, M. Xu, Z. Yin, X. Materials Chemistry and Physics 114, 430 (2009).Google Scholar
12 Sarma, D. D. and Rao, C. N. R. J. Electron Spectrosc. Relat. Phenom. 20, 25 (1980).Google Scholar
13 Paladia, B. D. Lang, W. C. Norris, P. R. Watson, L. M. and Fabian, P. J. ProRoy, c. Soc. Ser. A 354, 269 (1977).Google Scholar
14 Mahata, C. Bera, M. K. Das, T. Mallik, S. Hota, M. K. Majhi, B. Verma, S. Bose, P. K. and Maiti, C. K. Semicond. Sci. Technol. 24, 085006 (2009).Google Scholar
15 Perego, M. Molle, A. and Fanciulli, M. Appl. Phys. Lett. 92, 042106 (2008).Google Scholar
16 Toyoda, S. Kamada, H. Tanimura, T. Kumigashira, H. Oshima, M. Ohtsuka, T. Hata, Y. and Niwa, M. Appl. Phys. Lett. 96, 042905 (2010).Google Scholar
17 Conard, T. Huyghebaert, C. Vandervorst, W. Applid Surface Science 231–232, 574 (2004).Google Scholar
18 Catana, A. and Locquet, J.-P. Journal of Materials Research 8, 1373 (1993).Google Scholar