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Epitaxial Al(110) Films Grown On Heavily-Doped Si(100) by Cluster Beam Deposition.

Published online by Cambridge University Press:  28 February 2011

S. Wada ,
M. I. Current ,
G. H. Takaoka ,
H. Usui  and
I. Yamada
S. Wada
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo-ku, Kyoto 606–01, JAPAN.
M. I. Current
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo-ku, Kyoto 606–01, JAPAN.
G. H. Takaoka
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo-ku, Kyoto 606–01, JAPAN.
H. Usui
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo-ku, Kyoto 606–01, JAPAN.
I. Yamada
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo-ku, Kyoto 606–01, JAPAN.
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Abstract

ABSTRACT:Epitaxial Al films have been grown on heavily doped Si(100) by neutral cluster beam deposition. The Al films were evaluated by RBS, RHEED, optical interference roughness maps and STM imaging. The results were consistent with the formation of epitaxial Al (110) bi-crystals similar to films grown by ionized cluster beam deposition on lightly-doped Si

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 621
Copyright
Copyright © Materials Research Society 1992

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References

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