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Environmental Effects on Subcritical Delamination of Dielectric and Metal Films from Organosilicate Glass (OSG) Thin Films

Published online by Cambridge University Press:  01 February 2011

Y. Lin ,
J.J. Vlassak ,
T.Y. Tsui  and
A.J. McKerrow
Y. Lin
Affiliation:
DEAS, Harvard University, 29 Oxford Street, Cambridge, MA 02138, USA
J.J. Vlassak
Affiliation:
DEAS, Harvard University, 29 Oxford Street, Cambridge, MA 02138, USA
T.Y. Tsui
Affiliation:
Silicon Technology Development, Texas Instruments Inc., Dallas, TX 75243,USA
A.J. McKerrow
Affiliation:
Silicon Technology Development, Texas Instruments Inc., Dallas, TX 75243,USA
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Abstract

Subcritical delamination of dielectric and metal films from organosilicate glass (OSG) thin films was studied in controlled ambient with different levels of relative humidity and in aqueous environments of varying pH. The material systems studied include OSG/SiO2, OSG/TaN and OSG/SiNx. For both sets of experiments, subcritical crack growth in OSG is found to be described by a model originally developed for soda-lime silicate glass. The threshold energy release rate for water molecule-assisted cracking varies linearly with the natural logarithm of water partial pressure. In aqueous environments, the threshold value decreases linearly with increasing pH in accordance with a simple model. The slope of crack growth rate curve also decreases with increasing pH.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E9.4
Copyright
Copyright © Materials Research Society 2003

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References

1. Charalambides, P. G., Lund, J., Evans, A. G. and McMeeking, R. M., Journal of Applied Mechanics, 56, 77 (1989).Google Scholar
2. Ma, Q., Fujimoto, H., Flinn, P., Jain, V., Adibi-Rizi, F., Moghadam, F. and Dauskardt, R. H., in Materials Reliability in Microelectronics V, edited byOates, A. S., Filter, W. F., Rosenberg, R., Greer, A. L. and Gadepally, K. (Mater. Res. Soc. Symp. Proc. 391, Pittsburgh, PA, 1995), pp. 91–96.Google Scholar
3. Ma, Q., Journal of Materials Research, 12 (3), 840 (1997).Google Scholar
4. Wiederhorn, S. M., Journal of The American Ceramic Society, 50 (8), 407 (1967).Google Scholar
5. Cook, R. E. and Liniger, E. G., Journal of The American Ceramic Society, 76 (5), 1096 (1993).Google Scholar
6. Lane, M., Dauskardt, R., Ma, Q., Fujimoto, H. and Krishna, N., Materials Research Society Symposium Proceedings, 563, 251 (1999).Google Scholar
7. Iler, R. K., The Chemistry of Silica: Solubility, Polymerization, Colloid and Surface Properties and Biochemistry of Silica, (John Wiley & Sons, 1979) p. 47.Google Scholar
8. Wiederhorn, S. M. and Johnson, H., Journal of The American Ceramic Society, 56 (4), 192 (1973).Google Scholar