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Enhancements in Two Dimensional Electron Gas Density and Mobility in δ-Doped AiGaAs Heterostructures

Published online by Cambridge University Press:  26 February 2011

J. E. Cunningham ,
G. L Timp ,
E. F. Schubert ,
W. T. Tsang ,
P. G. N. DeVegvar ,
T. H. Chiu  and
E. Agyekum
J. E. Cunningham
Affiliation:
AT&T Bell Laboratories, Crawfords Corner Rd., Holmdel, NJ 07733
G. L Timp
Affiliation:
AT&T Bell Laboratories, Crawfords Corner Rd., Holmdel, NJ 07733
E. F. Schubert
Affiliation:
AT&T Bell Laboratories, Crawfords Corner Rd., Holmdel, NJ 07733
W. T. Tsang
Affiliation:
AT&T Bell Laboratories, Crawfords Corner Rd., Holmdel, NJ 07733
P. G. N. DeVegvar
Affiliation:
AT&T Bell Laboratories, Crawfords Corner Rd., Holmdel, NJ 07733
T. H. Chiu
Affiliation:
AT&T Bell Laboratories, Crawfords Corner Rd., Holmdel, NJ 07733
E. Agyekum
Affiliation:
AT&T Bell Laboratories, Crawfords Corner Rd., Holmdel, NJ 07733
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Abstract

We report our recent investigations of a new structure formed by b-doping the barrier of an AlGaAs/GaAs heterostructure. In this new structure we have observed both a mobility of 1.9×lO6cm2/Vsec and the fractional quantum hall effect. We compare low temperature mobilities and densities achieved with the δ-doped heterostructure with corresponding high values reported in the literature for the homogeneously- doped heterostructure. We show that systematic enhancements in both density and mobility occur in the b-doped heterostructure. By δ-doping both barriers of a quantum well we have also achieved electron concentrations of 4×1012cm -2 in the well.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 509
Copyright
Copyright © Materials Research Society 1988

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References

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