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Enhancement of Oxygen Precipitation in Quenched Czochralski Silicon Crystals

Published online by Cambridge University Press:  25 February 2011

A. Hara ,
T. Fukuda ,
I. Hirai  and
A. Ohsawa
A. Hara
Affiliation:
Fujitsu Laboratories Ltd., Kamikodanaka, Nakahara-ku, Kawasaki, Japan
T. Fukuda
Affiliation:
Fujitsu Laboratories Ltd., Kamikodanaka, Nakahara-ku, Kawasaki, Japan
I. Hirai
Affiliation:
Fujitsu Laboratories Ltd., Kamikodanaka, Nakahara-ku, Kawasaki, Japan
A. Ohsawa
Affiliation:
Fujitsu Laboratories Ltd., Kamikodanaka, Nakahara-ku, Kawasaki, Japan
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Abstract

We studied oxygen precipitation in quenched Czochralski silicon crystals. The larger the cooling rate and the higher the quenching temperature, the more oxygen precipitated. The defects enhancing oxygen precipitation are eliminated by annealing above 900°C. The defects are formed and removed repeatedly by quenching and slow cooling. We think that the aggregation of vacancies is related to those defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 969
Copyright
Copyright © Materials Research Society 1990

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References

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