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Enhancement of InGaN-based MQW Grown on Si(111) Substrate by Underlying AlGaN/GaN SLS Cladding Layer

Published online by Cambridge University Press:  31 January 2011

Bin Abu Bakar Ahmad Shuhaimi ,
Takaaki Suzue ,
Yukiyasu Nomura ,
Yoshinori Maki  and
Takashi Egawa
Bin Abu Bakar Ahmad Shuhaimi
Affiliation:
[email protected], Nagoya Institute of Technology, Research Center for Nano-Device and System, Nagoya, Aichi, Japan
Takaaki Suzue
Affiliation:
[email protected], United States
Yukiyasu Nomura
Affiliation:
[email protected], United States
Yoshinori Maki
Affiliation:
[email protected], Nagoya Institute of Technology, Research Center for Nano-Device and System, Nagoya, Aichi, Japan
Takashi Egawa
Affiliation:
[email protected], United States
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Abstract

This paper reports enhanced internal-quantum-efficiency (IQE) in InGaN-based multi-quantum-well (MQW) grown on Si(111) substrate with underlying strained-layer-superlattice (SLS) cladding layer for application in LDs and LEDs. In comparative study between a thick Al0.03Ga0.97N bulk and an Al0.06Ga0.94N/GaN SLS cladding layer, transmission-electron-microscopy (TEM) images reveal that Al0.06Ga0.94N/GaN SLS cladding layer is effective to suppress threading dislocations. A higher IQE has been achieved in sample with underlying Al0.06Ga0.94N/GaN SLS cladding layer, compared to that of Al0.03Ga0.97N bulk cladding layer. IQE of 31.6% has been achieved in sample with underlying Al0.06Ga0.94N/GaN SLS cladding layer when the MQW thickness is reduced to 2 nm.

Keywords

nitrideIII-VSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1167: Symposium O – Compound Semiconductors for Energy Applications and Environmental Sustainability , 2009 , 1167-O02-05
Copyright
Copyright © Materials Research Society 2009

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