Hostname: page-component-6bf8c574d5-t27h7 Total loading time: 0 Render date: 2025-02-20T14:54:04.779Z Has data issue: false hasContentIssue false
  • English
  • Français

Enhancement of Grain Growth In Ultra-Thin Germanium Films By Ion Bombardment

Published online by Cambridge University Press:  26 February 2011

Harry A. Atwater ,
Henry I. Smith  and
Carl V. Thompson
Harry A. Atwater
Affiliation:
Massachusetts Institute of Technology Cambridge, Mass. 02139
Henry I. Smith
Affiliation:
Massachusetts Institute of Technology Cambridge, Mass. 02139
Carl V. Thompson
Affiliation:
Massachusetts Institute of Technology Cambridge, Mass. 02139
Get access

Abstract

We report the enhancement of grain growth in 50 nm-thick Ge films during Ge ion bombardment, or self-implantation, at 500-600 ° C. Conventional and cross-sectional transmission electron microscopy (TEM) indicate that normal grains grow to a columnar structure at considerably lower temperatures than during ordinary thermal annealing. Furthermore, self-implantation-enhanced normal grain growth is found to be very weakly dependent on temperature. The time dependence and temperature dependence of grain growth during self-implantation were compared with data for thermal annealing experiments and suggest that the enhancement results from elastic collisions between ions and atoms located at the grain boundaries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 51: Symposium A – Beam-Solid Interactions and Phase Transformations , 1985 , 337
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Russell, K.C., to be published in Progress in Materials Science, Christian, J., Haasen, P., and Massalski, T.B. eds., Oxford Univ. Press.Google Scholar
2. Strack, H., J. Appl. Phys. 34, 2405 (1963).CrossRefGoogle Scholar
3. Minear, R.L., Nelson, D.G. and Gibbons, J.F., J. Appl. Phys. 43, 3468 (1972).Google Scholar
4. Maby, E.W., J. Appl. Phys. 47, 830 (1976).CrossRefGoogle Scholar
5. Golecki, I., Chapman, G.E., Lau, S.S., Tsaur, B-Y. and Mayer, J.W., Physics Lett. 71A, 267 (1979).Google Scholar
6. Cannavo, S., Grimaldi, M. G., Rimini, E., Ferla, G. and Gandolfi, L., Appl. Phys. Lett. 41, 138 (1985).CrossRefGoogle Scholar
7. Williams, J.S., Elliman, R.G., Brown, W.L. and Seidel, T.E., Phys. Rev Lett. 55, 1482 (1985).Google Scholar
8. Holmen, G., Peterstrom, S., Buren, A. and Bogh, E., Rad. Effects, 24, 45 (1975).CrossRefGoogle Scholar
9. Zalm, P.C. and Beckers, L.J., Appl. Phys. Lett. 41, 167 (1982).Google Scholar
10. Srolovitz, D.J. and Thompson, C.V. to be published in Thin Solid Films.Google Scholar
11. Palmer, J.E. Thesis, S.M., Dept. of Electrical Eng. and Computer Sci., MIT, August 1985.Google Scholar
12. Holmen, G., Hogberg, P., and Buren, A., Rad. Effects. 24, 39 (1975).Google Scholar
13. Wada, Y. and Nishimatsu, S., J. Electrochem Soc. 125, 1499 (1978).Google Scholar
14. Smith, D.A. and Tan, T.Y., in Grain Boundaries in Semiconductors edited by Leamy, H.J., Pike, G.E. and Seager, C.H. (Elsevier Science Publishers, New York, 1982) p. 63.Google Scholar
15. Seeger, A. and Chik, K.P., Phys. Stat. Sol. 29, 455 (1968).Google Scholar
16. Gordon, P. and El-Bassyouni, T.A., Trans. Am. Inst. Min. Engrs. 233, 391 (1965).Google Scholar
17. Drolet, J.P. and Galibois, A., Acta Met. 16, 1387 (1968).Google Scholar