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Enhanced Rate of SIO2 Growth in Ge-Implanted SI*

Published online by Cambridge University Press:  25 February 2011

D. Fathy ,
C. W. White  and
O. W. Holland
D. Fathy
Affiliation:
Solid State Division, Oak Ridge National Laboratory, P. 0. Box X, Oak Ridge, TN 37831
C. W. White
Affiliation:
Solid State Division, Oak Ridge National Laboratory, P. 0. Box X, Oak Ridge, TN 37831
O. W. Holland
Affiliation:
Solid State Division, Oak Ridge National Laboratory, P. 0. Box X, Oak Ridge, TN 37831
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Abstract

The implantation of Ge in Si has been found to considerably increase the steam oxidation rate of Si under certain conditions. This effect has been studied for a range of implanted ion energies and doses. During steam oxidation, implanted Ge is rejected from the growing oxide and forms a thin layer between SiO2 and Si. Segregated Ge is epitaxial with the underlying Si, and leads to enhanced oxidation of the underlying Si. Evidence suggests that the Ge alters the interfacial kinetics associated with oxide formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 93: Symposium C – Materials Modification and Growth Using Ion Beams , 1987 , 27
Copyright
Copyright © Materials Research Society 1987

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Footnotes

*

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract DE-ACO5-840R21400 with Martin Marietta Energy Systems, Inc.

References

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