Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-05T17:06:18.782Z Has data issue: false hasContentIssue false

Enhanced Piezoelectric Properties of Piezoelectric Single Crystals by Domain Engineering

Published online by Cambridge University Press:  01 February 2011

Satoshi Wada
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2–12–1 Ookayama, Meguro, Tokyo 152–8552, Japan
Koichi Yako
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2–12–1 Ookayama, Meguro, Tokyo 152–8552, Japan
Hirofumi Kakemoto
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2–12–1 Ookayama, Meguro, Tokyo 152–8552, Japan
Takaaki Tsurumi
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2–12–1 Ookayama, Meguro, Tokyo 152–8552, Japan
Get access

Abstract

For tetragonal barium titanate (BaTiO3) single crystals, an electric field (E-field) applied along [111]c direction can induce an engineered domain configuration. In this study, the engineered domain structures with different domain sizes were induced into BaTiO3 single crystals, and their piezoelectric properties were investigated as a function of a domain size. Prior to this study, the dependence of domain configuration on the temperature and the E-field was investigated using a polarizing microscope in order to understand the optimum condition for fine and coarse domain structures. As a result, above Curie temperature (Tc) of 132.2 °C, when the E-field over 6 kV/cm was applied along [111]c direction, the engineered domain configuration with fine domain structure appeared. Moreover, it was also found that this fine domain structure was still stable at room temperature without E-field. On the other hand, the coarse domain structure was obtained by poling at just below Tc. Finally, the piezoelectric properties were measured using the 31 resonators with different kinds of domain sizes. As the result, it was found that the piezoelectric properties such as d31 and k31 increased significantly with decreasing domain sizes.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Park, S.-E. and Shrout, T. R., IEEE Trans. Ultrasonics, Ferroelectrics and Frequency Control, 44, 1140 (1997).10.1109/58.655639Google Scholar
2. Park, S.-E. and Shrout, T. R., Mater. Res. Innovat., 1, 20 (1997).10.1007/s100190050014Google Scholar
3. Park, S.-E. and Shrout, T. R., J. Appl. Phys., 82, 1804 (1997).10.1063/1.365983Google Scholar
4. Kuwata, J., Uchino, K. and Nomura, S., Ferroelectrics, 37, 579 (1981).10.1080/00150198108223490Google Scholar
5. Kuwata, J., Uchino, K. and Nomura, S., Jpn. J. Appl. Phys., 21, 1298 (1982).10.1143/JJAP.21.1298Google Scholar
6. Wada, S., Kakemoto, H., Tsurumi, T., Park, S.-E., Cross, L. E. and Shrout, T. R., Trans. Mater. Res. Soc. Jpn., 27, 281 (2002).Google Scholar
7. Wada, S., Suzuki, S., Noma, T., Suzuki, T., Osada, M., Kakihana, M., Park, S.-E., Cross, L. E. and Shrout, T. R., Jpn. J. Appl. Phys., 38, 5505 (1999).10.1143/JJAP.38.5505Google Scholar
8. Wada, S. and Tsurumi, T., Trans. Mater. Res. Soc. Jpn., 26, 11 (2001).Google Scholar
9. Wada, S., Park, S.-E., Cross, L. E. and Shrout, T. R., J. Korean Phys. Soc., 32, S1290 (1998).Google Scholar
10. Wada, S., Park, S.-E., Cross, L. E. and Shrout, T. R., Ferroelectrics, 221, 147 (1999).10.1080/00150199908016449Google Scholar
11. Ajimura, S., Tomomatu, K., Nakao, O., Kurosaka, A., Tominaga, H. and Fukuda, O., J. Opt. Soc. Am. B, 9, 1609 (1992).10.1364/JOSAB.9.001609Google Scholar
12. Nakao, O., Tomomatsu, K., Ajimura, S., Kurosaka, A. and Tominaga, H., Jpn. J. Appl. Phys., 31, 3117 (1992).10.1143/JJAP.31.3117Google Scholar
13. Nakao, O., Tomomatsu, K., Ajimura, S., Kurosaka, A. and Tominaga, H., Ferroelectrics, 156, 135 (1994).10.1080/00150199408215940Google Scholar
14. EMAS-6100: Standard of Electronic Materials Manufacturers Association of Japan (1993).Google Scholar
15. Park, S.-E., Wada, S., Cross, L. E. and Shrout, T. R., J. Appl. Phys., 86, 2746 (1999).10.1063/1.371120Google Scholar
16. Zgonik, M., Bernasconi, P., Duelli, M., Schlesser, R., Gunter, P., Garrett, M. H., Rytz, D., Zhu, Y. and Wu, X., Phys. Rev. B, 50, 5941 (1994).10.1103/PhysRevB.50.5941Google Scholar
17. Liu, S.-F., Park, S.-E., Cross, L. E. and Shrout, T. R., Ferroelectrics, 221, 169 (1999).10.1080/00150199908016451Google Scholar