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Enhanced Photoyield with Decreasing Film Thickness on Metal-Semiconductor Structures

Published online by Cambridge University Press:  03 September 2012

V. Hoffmann ,
M. Brauer  and
M. Schmidt
V. Hoffmann
Affiliation:
Hahn-Meitner-Institut, Rudower Chaussee 5, 12489 Berlin, Germany, [email protected]
M. Brauer
Affiliation:
Hahn-Meitner-Institut, Rudower Chaussee 5, 12489 Berlin, Germany, [email protected]
M. Schmidt
Affiliation:
Hahn-Meitner-Institut, Rudower Chaussee 5, 12489 Berlin, Germany, [email protected]
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Abstract

Experimental results of the internal quantum yield Yi associated with the internal photoemission on Au/n-Si structures are presented. The samples were prepared on Si(100) and Si(111) substrates with photoemitter layer thicknesses ranging from 5 nm to 50 nm. The Yi was measured at temperatures between 165 K and 300 K with the photoexciting energy varying from 0.72 eV to 1.07 eV. It was found that the Yi increases with decreasing Au layer thickness with a strong enhancement (40 times) in regard to the conventional Fowler theory. This experimental result is in good agreement with model calculations taking account of hot carrier scattering in the photoemitter layer. Barrier energies are larger than deduced from the Fowler plot.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 413
Copyright
Copyright © Materials Research Society 1997

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References

1 Chin, V.W., Storey, J.W.V. and Green, M.A., Solid-St. Electron. 39, 277 (1996).Google Scholar
2 Roca, E., Kyllesbech Larsen, K., Kolodinski, S. and Mertens, R., J. Appl. Phys. 79, 4426 (1996).Google Scholar
3 Lin, T.L., Park, J.S., Gunapala, S.D., Jones, E.W., and Del Castillo, H.M., IEEE Electron Device Letters 15, 103 (1994).Google Scholar
4 Kane, E.O., Phys. Rev. 147, 335 (1966).Google Scholar
5 Dalal, V.L., J.Appl.Phys. 42, 2274 (1971).Google Scholar
6 Lee, E.Y., Schowalter, L.J., J. Appl. Phys. 65, 4903 (1989).Google Scholar
7 Schmidt, M., Brauer, M., Hoffmann, V., Appl.Surf.Science 102, 303 (1996).Google Scholar
8 Fowler, R.H., Phys. Rev. 38, 45 (1931).Google Scholar
9 Quinn, J.J., Phys. Rev. 126, 1453 (1962).Google Scholar
10 Kao, Chung-Whei, Anderson, C.L., and Crowell, C.R., Surf.Sci. 95, 321 (1980).Google Scholar
11 Katnani, A.D., Stoffel, N.G., Edelmann, H.S., Margaritondo, G., J.Vac.Sci.Technol. 19, 290 (1981).Google Scholar
12 Palm, H., Arbes, M., Schulz, M., Phys. Rev. Lett. 71, 2224 (1993).Google Scholar
11 Sze, S.M., Physics of Semiconductor Devices, 2 nd Edn. Wiley, New York (1981), p. 15 Google Scholar
12 Crowell, C.R., Sze, S.M., Spitzer, W.G., Appl.Phys.Lett. 4, 91 (1964).Google Scholar