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Enhanced Photoluminescence from Long Wavelength InAs Quantum Dots Embedded in a Graded (In,Ga)As Quantum Well

Published online by Cambridge University Press:  21 March 2011

L. Chen ,
V. G. Stoleru ,
D. Pal ,
D. Pan  and
E. Towe
L. Chen
Affiliation:
Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904
V. G. Stoleru
Affiliation:
Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904
D. Pal
Affiliation:
Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904
D. Pan
Affiliation:
Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904
E. Towe
Affiliation:
Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904
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Abstract

Three sets of self-organized InAs quantum dots (QDs) embedded in an external InGaAs quantum well samples were grown by solid source molecular beam epitaxy (MBE). By modifying Indium composition profile within quantum well (QW) region, it's found the photoluminescence emission from quantum dots can be greatly enhanced when employing a graded quantum well to surround QDs. This quantum dots in a graded quantum well structure also preserves the long wavelength (1.3 μm) spectrum requirement for the future use in optoelectronics devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H3.3.1
Copyright
Copyright © Materials Research Society 2002

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References

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