Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-29T07:26:43.404Z Has data issue: false hasContentIssue false
  • English
  • Français

The Enhanced Outdiffusion and Its Influence on the Impurity Behavior in the Implanted Si at Rapid Electron Beam Annealing

Published online by Cambridge University Press:  25 February 2011

V. A. Kagadey ,
N. I. Lebedeva ,
D. I. Proskurovsky  and
L. V. Yakovleva
V. A. Kagadey
Affiliation:
Institute of High-Current Electronics, Russian Academy of Sciences, 4, Academichesky Av., 634055, Tomsk, Russia.
N. I. Lebedeva
Affiliation:
Institute of High-Current Electronics, Russian Academy of Sciences, 4, Academichesky Av., 634055, Tomsk, Russia.
D. I. Proskurovsky
Affiliation:
Institute of High-Current Electronics, Russian Academy of Sciences, 4, Academichesky Av., 634055, Tomsk, Russia.
L. V. Yakovleva
Affiliation:
Institute of High-Current Electronics, Russian Academy of Sciences, 4, Academichesky Av., 634055, Tomsk, Russia.
Get access

Abstract

The paper presents the results of a comprehensive study of the outdif-fusion of volatile impurities (P, As, Sb) from originally amorphous ion-implanted layers (IILs) of Si at rapid electron-beam heating in vacuum. The phenomenon of enhanced outdiffusion has been discovered and the activation energy of this process has been measured. It has been established that there exists an interconnection between the process of activation, deactivation, diffusion and segregation of the impurity in IIL and its outdiffusion. A qualitative model of the process determining this interconnection has been proposed. The reasons for the lowering of the potential barrier at the IIL-vacuum interface determining the abnormally high rates of vaporization of the impurity have been supposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 219
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Smits, F. M. and Miller, R. C., Phys. Rev. 104 (5), 1242 (1956).CrossRefGoogle Scholar
2. Tabe, M. and Nakamura, H., J. Appl Phys. 50 (8), 5292 (1976).Google Scholar
3. Kozhukhov, A. V., Kanter, B. Z., Stenin, S. I., Turovsky, B. M., and Chesnokov, S. A., Poverchnost' 9, 30 (1990).Google Scholar
4. McMachon, R. A., Ahmed, H., Godfrey, D. J., and Pitt, M. G., Microelectronics J. 15 (2), 5 (1984).Google Scholar
5. Kumar, S. N., Chaussemy, G., Canut, B., Barbier, D., and Laugier, A., Appl Surface Sci. 36, 545 (1989).Google Scholar
6. Alekseev, A. P., Zaporozhchenko, V. I., Kagadey, V. A., Lebedeva, N. I., Proskurovsky, D. I., and Yakovleva, L. V., Poverchnost 3, 20 (1993).Google Scholar
7. Kagadey, V. A., Lebedeva, N. I., Proskurovsky, D. I., and Yakovleva, L. V., Poverchnost (to be published).Google Scholar
8. Kreindel, Y. E., Lebedeva, N. I., Martens, V. I., Proskurovsky, D. I., and Yankelevich, E. B., Pis'ma v Zh. Tekhn. Fiz. 8 (23), 1465 (1982).Google Scholar
9. Kagadey, V. A., Lebedeva, N. I., Proskurovsky, D. I., and Yakovleva, L. V., Poverchnost, (to be published).Google Scholar
10. Grotzschel, R., Kagadey, V. A., Lebedeva, N. I., and Proskurovsky, D. I., Izv. Vyssh. Uchebn. Zaved., Fizika 8, 97 (1989).Google Scholar
11. Grotzschel, R., Kagadey, V. A., Knothe, P., Lebedeva, N. I., and Proskurovsky, D. I., Phys. Research 13, 234 (1990).Google Scholar
12. Gosele, U., Microelecton. Mater and Processor. NATO Adv. Study. Inst., 583 (1989).Google Scholar
13. Nanu, L. and Evans, A. G. R., Semicond. Sci. Technol. 4, 711 (1989).CrossRefGoogle Scholar
14. Pennycook, S. J., Narayan, J., and Holland, O. W., J. Electrochem. Soc. 32 (8), 1962 (1985).Google Scholar