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Enhanced Metallization Stability on Mercury-Cadmium-Telluride

Published online by Cambridge University Press:  21 February 2011

A. Raisanen ,
G. Haugstad ,
X. Yu ,
G. Ceccone  and
A. Franciosi
A. Raisanen
Affiliation:
Department of Chemical Engineering, and Materials Science University of Minnesota, Minneapolis, MN 55455
G. Haugstad
Affiliation:
Department of Chemical Engineering, and Materials Science University of Minnesota, Minneapolis, MN 55455
X. Yu
Affiliation:
Department of Chemical Engineering, and Materials Science University of Minnesota, Minneapolis, MN 55455
G. Ceccone
Affiliation:
Department of Chemical Engineering, and Materials Science University of Minnesota, Minneapolis, MN 55455
A. Franciosi
Affiliation:
Department of Chemical Engineering, and Materials Science University of Minnesota, Minneapolis, MN 55455
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Abstract

Synchrotron radiation photoemission studies of ultra-thin Yb diffusion barriers at the interface between Mercury-Cadmium-Telluride semiconductors and Ag overlayers show that the interlayers act as effective diffusion barrier only after thicknesses of 10-15 Å are reached. Studies of interlayer morphology by means of photoemission from physisorbed Xe indicate that effective diffusion barriers are consistent with a model in which a continous Yb-Te reacted layer is covered by an Yb-rich layer with high alloying enthalpy for Hg.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 297
Copyright
Copyright © Materials Research Society 1990

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References

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