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Enhanced Low-Temperature Crystallization of Amorphous Si Films Using AlCl3 Vapor

Published online by Cambridge University Press:  17 March 2011

Jin Hyung Ahn ,
Ji Hye Eom  and
Byung Tae Ahn
Jin Hyung Ahn
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305-701, Korea
Ji Hye Eom
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305-701, Korea
Byung Tae Ahn
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305-701, Korea
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Abstract

It is known that the direct contact between Al and a-Si enhances the crystallization of a-Si film. But the poly-Si films crystallized by the direct contact of Al metal film suffer the problems of rough surface and pores. In our study, we utilized the vapor from AlCl3 instead of Al metal film. The crystallization was enhanced by annealing a-Si films with AlCl3 that the crystallization was completed in 5h at 540. And the surface was as smooth as that of the a-Si film. The Al incorporation into the poly-Si film took place, but the content was below the detection limit of AES.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D5.19.1
Copyright
Copyright © Materials Research Society 2001

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