Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-19T03:28:29.212Z Has data issue: false hasContentIssue false
  • English
  • Français

Enhanced Interdiffusion Effects in Compound Semiconductors

Published online by Cambridge University Press:  26 February 2011

P. M. Petroff
P. M. Petroff*
Affiliation:
Department of Materials and Department of Electrical and Computer Engineering. University of California. Santa Barbara, CA 93106
Get access

Abstract

This paper reviews the principal processes involved in the enhanced interdiffusion of elements across interfaces between two III-V compound semiconductors. Implantation enhanced interdiffusion effects in GaAs-Gal−xAlxAs are compared for single Quantum Well structures and Superlattice structures. Measurements indicate a marked difference in the annealing and enhanced interdiffusion kinetics between these 2 types of structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 595
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

(1)Laidig, W.D., Holonyak, N., Camras, M.D., Hess, K., Coleman, J.J., Dapkus, D.P. and Bardeen, J., Appl. Phys. Lett. 38 776 (1981)Google Scholar
(2)Camras, M.D., Coleman, J.J., Holonyak, N., Hess, K., Dapkus, P.D. and Kirkpatrick, C.G., Inst. Phys. Conf. Series 65 223 (1982).Google Scholar
(3)Deppe, D.G., Guido, L.J., Holonyak, H., Hsieh, K.C., Burnham, R.D., Thornton, R.L. and Paoli, T.L.,Appl.Phys.Lett. 49,510,(1986).Google Scholar
(4)Cibert, J., Petroff, P.M., Werder, D.J., Pearton, S.J., Gossard, A.C. and English, J.H., Appl. Phys. Lett. 49,223 (1986).Google Scholar
(5)Schlessinger, T. and Kuech, Appl.Phys.Lett. 49,9,519,(1986)Google Scholar
(6)Seo, S., Bhattacharia, P.K., Kothiyal, G.P. and Hong, S.. Appl.Phys.Lett. 49,15,966 (1986)Google Scholar
(7)Petroff, P.M.J.Vac.Sci.Tech 14,973, (1977).Google Scholar
(8)Hirayama, Y., Suzuki, Y. and Okamoto, H., “Yamada Conf. Proceedings” 266 (1985).Google Scholar
(9)Hirayama, H., Surf.Science 174,98,(1986)Google Scholar
(10)Petroff, P.M., Cibert, J., Gossard, A.C., Dolan, G.J., Tu, C.W., J. Vac. Sci. Techn, B54 (1987).Google Scholar
(11)Gavrilovitch, P., Deppe, D.G., Meehan, K., Holoniak, N., Coleman, J.J., Burnham, R.D..Appl.Phys.Lett. 47,2,130 (1985)Google Scholar
(12)Dobisz, E.A., Tell, B., Craighead, H.G. and Tamargo, M., I. Appl. Phys 60 4150 (1986).Google Scholar
(13)Hirayama, Y., Suzuki, Y. and Okamoto, H., Jpn. Appl. Phys., 24, 1498 (1985).Google Scholar
(14)Kobayashi, J.Japn.J.Appl.Phys. L385 (1986)Google Scholar
(15)Ishida, K., Matsui, K., Fukunaga, T., Kobayashi, J., Morita, T., Miyaucho, E. and Nakashima, H.Appl.Phys.Lett. 51,2,109(1987)Google Scholar
(16)Kobayashi, J., Nakajima, M., Fukunaga, T.,, Takamori, T.,, Ishida, K., Nakashima, H., and Ishida, K.Jpn.J,Appl.Phys. 25, L736(1986)Google Scholar
(17)Bamba, Y., Miyauchi, E., Naskajima, M., Arimoto, H., Takamori, A., andHashimoto, H..Jpn.J.Appl. Phys. 24,1,L6,(1985)Google Scholar
(18)Tan, T.Y. andGösele, U..J.Appl.Phys. 61,5,1841(1987)Google Scholar
(19)Ralston, J., Wicks, G.W., Eastman, L.F., DeCooman, B.C., Carter, C.B..J.Appl.Phys. 59,120, (1986)Google Scholar
(20)Werder, D.J. and Pearton, S.J., J. Appl. Phys. 62,318 (1987).Google Scholar
(21)Cibert, J., Petroff, P.M., Dolan, G.J., Pearton, S.J., Gossard, A.C. and English, J.H., Appl. Phys. Lett. 49 1275 (1986).Google Scholar