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Enhanced Carbon Diffusion in Silicon During 900°0 Annealing

Published online by Cambridge University Press:  21 February 2011

L. A. Ladd ,
J. P. Kalejs  and
U. Gösele
J. P. Kalejs
Affiliation:
Mobil Solar Energy Corporation, 16 Hickory Drive, Waltham, MA 02254, U.S.A.
U. Gösele
Affiliation:
Zentrale Technik, Fdrschungslaboratorlen, 8000 MUnchen, Federal Republic of Germany
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Abstract

Enhanced diffusion of carbon Is observed to be produced during anneal ing of silicon at 900°C under conditions of surface oxidation and phosphorus in-diffusion. Silicon containing high concentrations of carbon (∼9 × 1017/cm3 substitutional) and varying levels of interstitial oxygen and differing defect concentrations has been studied. Diffusion coefficient enhancement over the value found for an anneal in an inert ambient is by a factor of three during oxidation and a factor of forty with phosphorus in-diffusion. Carbon accumulation takes place in a region 0.3–0.5 microns from the sample surface only under conditions of phosphorus in-diffusion and is attributed to carbon precipitation. A model that assumes Interactions between silicon self-interstitials and the carbon can explain both the enhanced diffusion and the carbon accumulation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 89
Copyright
Copyright © Materials Research Society 1985

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References

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