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Engineered large area fabrication of ordered InGaAs-GaAs nanotube arrays

Published online by Cambridge University Press:  01 February 2011

Ik Su Chun ,
Varun B Verma  and
Xiuling Li
Ik Su Chun
Affiliation:
University of Illinois at Urbana-Champaign, Department of Electrical and Computer Engineering, 2262 micro and nanotechnology Laboratory, MC-249 208 north wright street, Urbana, IL, 61801, United States
Varun B Verma
Affiliation:
[email protected], University of Illinois at Urbana-Champaign, Department of Electrical and Computer Engineering, Urbana, IL, 61801, United States
Xiuling Li
Affiliation:
[email protected], University of Illinois at Urbana-Champaign, Department of Electrical and Computer Engineering, Urbana, IL, 61801, United States
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Abstract

Strain induced self-rolling semiconductor micro and nanotubes and related structures represent a new class of building blocks of nanotechnology. They are formed when strained planar bilayers are released from the substrate by selectively removing the sacrificial layer. Compared to other nanotechnology building blocks, one of the main advantages is the precise positioning capability due to top down fabrication approach. In this article, we demonstrate the fabrication of perfectly aligned arrays of InGaAs/GaAs nanotubes and the dispersion of freestanding semiconductor nanotubes into solution and onto foreign substrates. In addition, we systematically investigate the crystal orientation dependence of the rolling direction by using a wheel configuration. Other aspects of formation process are also discussed.

Keywords

III-Vsemiconductingnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1057: Symposium II – Nanotubes and Related Nanostructures , 2007 , 1057-II05-40
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

[1] Iijima, S., “Helical microtubules of graphitic carbon”, Nature, 354, 56, 1991.Google Scholar
[2] Thostenson, E. T., Zhifeng, R., and Tsu-Wei, C., “Advances in the science and technology of carbon nanotubes and their composites: a review”, Composites Science and Technology, 61, 1899, 2001.Google Scholar
[3] Meitl, M. A., Yangxin, Z., Gaur, A., Seokwoo, J., Usrey, M. L., Strano, M. S., and Rogers, J. A., “Solution casting and transfer printing single-walled carbon nanotube films”, Nano Letters, 4, 1643, 2004.Google Scholar
[4] Heller, D. A., Jeng, E. S., Yeung, T.-K., Martinez, B. M., Moll, A. E., Gastala, J. B., and Strano, M. S., “Optical detection of DNA conformational polymorphism on single-walled carbon nanotubes”, Science, 311, 508, 2006.Google Scholar
[5] Bandaru, P. R., “Electrical characterization of carbon nanotube Y-junctions: a foundation for new nanoelectronics”, Journal of Materials Science, 42, 1809, 2007.Google Scholar
[6] Delzeit, L., Cassell, A., Hash, D., and Meyyappan, M., “Carbon nanotube growth by PECVD: A review”, Plasma Sources Science and Technology, 12, 205, 2003.Google Scholar
[7] Belin, T. and Epron, F., “Characterization methods of carbon nanotubes: a review”, Materials Science & Engineering B (Solid-State Materials for Advanced Technology), 119, 105, 2005.Google Scholar
[8] Dai, H., Rinzler, A. G., Nikolaev, P., and Thess, A., “Single-wall nanotubes produced by metal-catalyzed disproportionation of carbon monoxide”, Chemical Physics Letters, 260, 471, 1996.Google Scholar
[9] Meyyappan, M., Delzeit, L., Cassell, A., and Hash, D., “Carbon nanotube growth by PECVD: a review”, Plasma Sources, Science and Technology, 12, 205, 2003.Google Scholar
[10] Oncel, C. and Yurum, Y., “Carbon nanotube synthesis via the catalytic CVD method: A review on the effect of reaction parameters”, Fullerenes Nanotubes and Carbon Nanostructures, 14, 17, 2006.Google Scholar
[11] Melechko, A. V., Merkulov, V. I., McKnight, T. E., Guillorn, M. A., Klein, K. L., Lowndes, D. H., and Simpson, M. L., “Vertically aligned carbon nanofibers and related structures: controlled synthesis and directed assembly”, Journal of Applied Physics, 97, 41301, 2005.Google Scholar
[12] Smalley, R. E., Li, Y., Moore, V. C., Price, B. K., Colorado, R. Jr, Schmidt, H. K., Hauge, R. H., Barron, A. R., and Tour, J. M., “Single wall carbon nanotube amplification: En route to a type-specific growth mechanism”, Journal of the American Chemical Society, 128, 15824, 2006.Google Scholar
[13] Kingston, C. T. and Simard, B., “Recent advances in laser synthesis of single-walled carbon nanotubes”, J. Nanosci. Nanotechnol., 6, 1225, 2006.Google Scholar
[14] Prinz, V. Y., Seleznev, V. A., Gutakovsky, A. K., Chehovskiy, A. V., Preobrazhenskii, V. V., Putyato, M. A., and Gavrilova, T. A., “Free-standing and overgrown InGaAs/GaAs nanotubes, nanohelices and their arrays”, Ottawa, Ont., Canada, 2000.Google Scholar
[15] Prinz, V. Y., Golod, S. V., Mashanov, V. I., and Gutakovsky, A. K., “Free-standing conductive GeSi/Si helical microcoils, micro- and nanotubes”, Berlin, Germany, 2000.Google Scholar
[16] Songmuang, R., Deneke, C., and Schmidt, O. G., “Rolled-up micro- and nanotubes from single-material thin films”, Appl. Phys. Lett., 89, 223109, 2006.Google Scholar
[17] Deneke, C., Jin-Phillipp, N. Y., Loa, I., and Schmidt, O. G., “Radial superlattices and single nanoreactors”, Appl. Phys. Lett., 84, 4475, 2004.Google Scholar
[18] Paetzelt, H., Gottschalch, V., Bauer, J., Herrnberger, H., and Wagner, G., “Fabrication of III - V nano- and microtubes using MOVPE grown materials”, Physica Status Solidi (A), 203, 817, 2006.Google Scholar
[19] Yeoh, M. M. T., Feinberg, Z., Leung, M., Tasci, M., Elarde, V. C., and Coleman, J. J., “In Situ Observation of the Formation Dynamics of Nanohelices”, Mater. Res. Soc. Symp. Proc., 924, Z06, 2006.Google Scholar
[20] Zhang, L., Deckhardt, E., Weber, A., Schonenberger, C., and Grutzmacher, D., “Controllable fabrication of SiGe/Si and SiGe/Si/Cr helical nanobelts”, Nanotechnology, 16, 655, 2005.Google Scholar
[21] Chun, I. S., Verma, V. B., Elarde, V. C., Kim, S. K., Zuo, J. M., Coleman, J. J., and Li, X., J. Cryst. Growth, in press, 2007.Google Scholar
[22] Schmidt, O. G., Deneke, C., Kiravittaya, S., Songmuang, R., Heidemeyer, H., Nakamura, Y., Zapf-Gottwick, R., Muller, C., and Jin-Phillipp, N. Y., “Self-assembled nanoholes, lateral quantum-dot molecules, and rolled-up nanotubes”, IEEE J Sel. Topics Quantum Electron., 8, 1025, 2002.Google Scholar
[23] Cottam, R. I. and Saunders, G. A., “The elastic constants of GaAs from 2 K to 320 K”, Journal of Physics C, 6, 2105, 1973.Google Scholar
[24] Brantley, W. A., “Calculated elastic constants for stress problems associated with semiconductor devices”, Journal of Applied Physics, 44, 534, 1973.Google Scholar
[25] Grundmann, M., “Nanoscroll formation from strained layer heterostructures”, Appl. Phys. Lett., 83, 2444, 2003.Google Scholar
[26] Prinz, V. Y. and Golod, S. V., “Elastic silicon-film-based nanoshells: formation, properties, and applications”, Journal of Applied Mechanics and Technical Physics, 47, 867, 2006.Google Scholar
[27] Huang, M., Boons, C., Roberts, M., Savage, D. E., Lagally, M. G., Shaji, N., Qin, H., Blick, R., Nairn, J. A., and Liu, F., “Nanomechanical architecture of strained bilayer thin films: From design principles to experimental fabrication”, Advanced Materials, 17, 2860, 2005.Google Scholar